Semiconductor package and methods of manufacturing a semiconductor package

A method, comprising:

• forming a first metallization structure on a first surface of a semiconductor wafer, the semiconductor wafer comprising separation regions arranged between component positions, the component positions comprising a device region comprising an electronic device, the first metallization structure being arranged on the component positions and comprising a plurality of outer contact pads forming a package footprint;
• forming at least one second trench in the first surface of the semiconductor wafer in the separation regions;
• applying a first epoxy layer to the first surface of the semiconductor wafer such that the at least one second trench and edge regions of the component positions are covered with the first epoxy layer;
• removing portions of a second surface of the semiconductor wafer, the second surface opposing the first surface, to form a worked second surface and to reveal portions of the first epoxy layer in the separation regions;
• forming at least one first trench in the worked second surface of the semiconductor wafer in the device region of the component positions;
• inserting conductive material into the at least one first trench;
• applying a second metallization layer to the worked second surface and operably coupling the second metallization layer to the conductive material and one of the outer contact pads on the first surface;
• and
• cutting through the first epoxy layer in the separation regions to form a plurality of separate semiconductor packages,
• wherein the component positions of the semiconductor wafer further comprise a further electronic device, the further device region being laterally separated from the device region by a non-device region, and
• wherein the second metallization layer is further applied to the further electronic device and couples the further electronic device to the conductive material and the outer contact pad on the first surface and the electronic device.

A method, comprising:

• forming at least one first trench in a first surface of a semiconductor wafer in a device region, the semiconductor wafer comprising separation regions arranged between component positions of the semiconductor wafer, the component positions comprising the device region comprising an electronic device;
• forming a first metallization structure on the first surface in the component positions, the first metallization structure comprising a plurality of outer contact pads forming a package footprint, and inserting conductive material into the at least one first trench;
• forming at least one second trench in the first surface of the semiconductor wafer in the separation regions;
• applying a first epoxy layer to the first surface of the semiconductor wafer such that the at least one second trench and edge regions of the component positions are covered with the first epoxy layer;
• removing portions of a second surface of the semiconductor wafer, the second surface opposing the first surface, to reveal portions of the first epoxy layer in the separation regions and the conductive material in the at least one first trench and to produce a worked second surface;
• applying a second metallization layer to the worked second surface and operably coupling the second metallization layer to the conductive material and an outer contact pad on the first surface;
• and
• cutting through the first epoxy layer in the separation regions to form a plurality of separate semiconductor packages,
• wherein the first epoxy layer is applied to the first surface of the semiconductor wafer such that the first epoxy layer comprises openings, wherein outer surfaces of the outer contact pads that are opposite from the first surface of the semiconductor wafer are at least partially exposed by the openings in the first epoxy layer.