Semiconductor device with bond pad extensions formed on molded appendage

An assembly, comprising:

• a semiconductor device, comprising:
• a semiconductor die comprising a main surface, a rear surface, outer edge sides extending between the main and rear surfaces, and a first conductive bond pad disposed on the main surface;
• an electrically insulating mold compound body that is formed around the outer edge sides of the semiconductor die such that the main surface of the semiconductor die is exposed from an upper surface of the mold compound body;
• a first metallization layer formed on the upper surface of the mold compound body and on the main surface of the semiconductor die;
• and
• a first bond pad extension that is formed in the first metallization layer and is conductively connected with the first conductive bond pad;
• an electrical contact point external to the semiconductor device;
• an attachable electrical connector forming a conductive connection between the first bond pad extension and the electrical contact point;
• and
• an electrically conductive lead frame that comprises a die paddle and a plurality of electrically conductive leads extending away from the die paddle, and
• wherein the semiconductor device is mounted on the die paddle, and wherein the electrical contact point is one of the leads.

A method of forming a semiconductor device, the method comprising:

• providing a semiconductor die comprising a main surface, a rear surface, outer edge sides extending between the main and rear surfaces, and a first conductive bond pad disposed on the main surface;
• forming an electrically insulating mold compound body around the outer edge sides of the semiconductor die such that the main surface of the semiconductor die is exposed from an upper surface of the mold compound body;
• forming a first metallization layer on the upper surface of the mold compound body and on the main surface of the semiconductor die;
• and
• forming a first bond pad extension in the first metallization layer,
• wherein the first bond pad extension overlaps with the upper surface of the mold compound body,
• wherein the first bond pad extension is conductively connected with the first conductive bond pad, and
• wherein the first bond pad extension is an externally accessible point of electrical contact of the semiconductor device,
• wherein forming the first metallization layer comprises structuring the first metallization layer to include a first continuous region of the first metallization layer that overlaps with the semiconductor die and the mold compound body, wherein the first continuous region forms the first bond pad extension and a first bond pad connector that at least partially overlaps with the first conductive bond pad, and wherein the method further comprises forming a direct electrical connection between the first continuous region and the first bond pad connector, and
• wherein the mold compound body is formed to include a first appendage that adjoins a first one of the outer edge sides of the semiconductor die and laterally extends away from the first edge side, and wherein the first bond pad connector laterally extends over the first edge side of the semiconductor die and merges with the first bond pad extension.