Semiconductor device and method of manufacturing the same
AssigneeRenesas Electronics Corporation
InventorTakashi Tonegawa
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Abstract
Reliability of a semiconductor device having a plated layer formed on an electrode pad is improved. The method of manufacturing the semiconductor device includes a step for forming the plated layer on the electrode pad by moving the semiconductor wafer at a second speed, in a nickel-plating solution, after moving the semiconductor wafer at a first speed higher than the second speed. After moving the semiconductor wafer at the first speed, the semiconductor wafer is moved at the second speed without bringing the semiconductor wafer out from the nickel-plating solution.
Claims12
A method of manufacturing a semiconductor device including a step for forming a plated layer on an electrode pad by an electroless plating method, comprising the steps of:
- preparing a semiconductor wafer having a semiconductor substrate, an insulating layer formed on the semiconductor substrate, and the electrode pad formed on the insulating layer;
- and
- forming the plated layer on the electrode pad by moving the semiconductor wafer at a second speed, in a nickel-plating solution, after moving the semiconductor wafer at a first speed higher than the second speed,
- wherein after moving the semiconductor wafer at the first speed, the semiconductor wafer is moved at the second speed without bringing the semiconductor wafer out from the nickel-plating solution.
Dependencies are inferred from the claim text.