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US 11,081,425 B2Granted
Semiconductor packages
AssigneeSamsung Electronics Co., Ltd.
InventorsGun-Ho Chang, Seung-Duk Baek
Life of this patent
Estimating the term…
Abstract
A semiconductor package includes a base wafer including a first substrate and at least one first through via electrode extending through the first substrate, and a first semiconductor chip provided on the base wafer. The first semiconductor chip includes a second substrate; and at least one second through via electrode extending through the second substrate. The at least one second through via electrode is provided on the at least one first through via electrode to be electrically connected to the at least one first through via electrode. A first diameter of the at least one first through via electrode in a first direction is greater than a second diameter of the at least one second through via electrode in the first direction.
Claims19
A semiconductor package comprising:
- a base wafer including:
- a first substrate;
- and
- at least one first through via electrode extending through the first substrate;
- and
- a first semiconductor chip provided on the base wafer, the first semiconductor chip including:
- a second substrate;
- and
- at least one second through via electrode extending through the second substrate,
- wherein the at least one second through via electrode is provided on the at least one first through via electrode to be electrically connected to the at least one first through via electrode,
- wherein a first diameter of the at least one first through via electrode in a first direction is greater than a second diameter of the at least one second through via electrode in the first direction,
- wherein a first aspect ratio of the at least one first through via electrode is substantially equal to or greater than a second aspect ratio of the at least one second through via electrode,
- wherein the first aspect ratio is a ratio of a first length of the at least one first through via electrode in a second direction to the first diameter of the at least one first through via electrode in the first direction, the second direction being substantially perpendicular to the first direction, and
- wherein the second aspect ratio is a ratio of a second length of the at least one second through via electrode in the second direction to the second diameter of the at least one second through via electrode in the first direction.
11 more elements
A semiconductor package comprising:
- a package substrate;
- an interposer provided on the package substrate;
- a base chip including:
- a first substrate;
- and
- at least one first through via electrode extending through the first substrate;
- a first semiconductor chip provided on the base chip, the first semiconductor chip including:
- a second substrate;
- and
- at least one second through via electrode extending through the second substrate;
- and
- a processor chip provided on the interposer and spaced apart in a first direction from the base chip,
- wherein the at least one second through via electrode is provided on the at least one first through via electrode to be electrically connected to the at least one through via electrode,
- wherein a first diameter of the at least one first through via electrode in the first direction is greater than a second diameter of the at least one second through via electrode in the first direction,
- wherein a first aspect ratio of the at least one first through via electrode is substantially equal to or greater than a second aspect ratio of the at least one second through via electrode,
- wherein the first aspect ratio is a ratio of a first length of the at least one first through via electrode in a second direction to the first diameter of the at least one first through via electrode in the first direction, the second direction being substantially perpendicular to the first direction, and
- wherein the second aspect ratio is a ratio of a second length of the at least one second through via electrode in the second direction to the second diameter of the at least one second through via electrode in the first direction.
14 more elements
A semiconductor package comprising:
- a package substrate;
- an interposer provided on the package substrate;
- a base chip including:
- a first substrate;
- and
- at least one first through via electrode extending through the first substrate;
- a first semiconductor chip provided on the base chip, the first semiconductor chip including:
- a second substrate;
- and
- at least one second through via electrode extending through the second substrate;
- and
- a processor chip provided on the interposer and spaced apart in a first direction from the base chip,
- wherein a first diameter of the at least one first through via electrode in the first direction is different from a second diameter of the at least one second through via electrode in the first direction,
- wherein a first aspect ratio of the first through via electrode is equal to or greater than a second aspect ratio of the second through via electrode,
- wherein the first aspect ratio is a ratio of a first length of the at least one first through via electrode in a second direction to the first diameter of the at least one first through via electrode in the first direction, the second direction being substantially perpendicular to the first direction, and
- wherein the second aspect ratio is a ratio of a second length of the at least one second through via electrode in the second direction to the second diameter of the at least one second through via electrode in the first direction.
13 more elements
Dependencies are inferred from the claim text.