Manufacturing a package using plateable encapsulant
AssigneeInfineon Technologies AG
InventorsSook Woon Chan, Chau Fatt Chiang, Kok Yau Chua, Soon Lock Goh, Swee Kah Lee, Joachim Mahler, Mei Chin Ng, Beng Keh See, Guan Choon Matthew Nelson Tee
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Abstract
A method of manufacturing a package, comprising embedding the semiconductor chip with an encapsulant comprising a transition metal in a concentration in a range between 10 ppm and 10,000 ppm; selectively converting of a part of the transition metal, such that the electrical conductivity of the encapsulant increases; and plating the converted part of the encapsulant with an electrically conductive material.
Claims17
A method of manufacturing a package, the method comprising:
- embedding a semiconductor chip with an encapsulant comprising a transition metal in a concentration in a range between 10 ppm and 10,000 ppm,
- wherein the encapsulant comprises a polymer cluster and a coupling agent between the transition metal and the polymer cluster;
- selectively converting of a part of the transition metal, such that the electrical conductivity of the encapsulant increases;
- and
- plating the converted part of the encapsulant with an electrically conductive material.
A package, comprising:
- at least one semiconductor chip;
- and
- an encapsulant in which the semiconductor chip is embedded;
- wherein the encapsulant comprises a transition metal in a concentration in a range between 10 ppm and 10,000 ppm,
- wherein the encapsulant comprises a polymer cluster and a coupling agent between the transition metal and the polymer cluster,
- wherein a part of the transition metal comprises a converted part configured for providing an electrical conductivity of the encapsulant,
- wherein the converted part of the transition metal of the encapsulant is plated with an electrically conductive material.
Dependencies are inferred from the claim text.