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US 11,081,408 B2Granted
Methods for wafer warpage control
AssigneeYangtze Memory Technologies Co., Ltd.
InventorsDandan Shi, Ming Hu, Shijin Luo, Zhiliang Xia, Zhi Zhang
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Abstract
Aspects of the disclosure provide a method for wafer warpage control. The method includes forming a filling structure in a slit opening on a wafer. Further, the method includes measuring a warpage parameter of the wafer, and determining a thermal profile to adjust a warpage parameter into a target range based on the warpage parameter. Then, the method includes performing a process having the determined thermal profile to adjust the warpage parameter into the target range.
Claims20
A method for wafer warpage control, comprising:
- forming a filling structure in a slit opening on a wafer;
- measuring a warpage parameter of the wafer;
- determining a thermal profile to adjust a warpage parameter into a target range based on the warpage parameter;
- and
- performing a process having the determined thermal profile to adjust the warpage parameter into the target range.
2 more elements
Dependencies are inferred from the claim text.