Semiconductor device and method for manufacturing the same

A method for manufacturing a semiconductor device, comprising:

• forming first and second semiconductor fins extending upwardly from a substrate, wherein the first semiconductor fin is of an N-type fin-like field effect transistor and the second semiconductor fin is of P-type fin-like field effect transistor;
• forming a dummy gate structure across the first and second semiconductor fins;
• forming a first flowable dielectric layer over the first and second semiconductor fins;
• curing the first flowable dielectric layer at a first temperature by using a first annealing process;
• removing a first portion of the cured first flowable dielectric layer from above the second semiconductor fin;
• after removing the first portion of the cured first flowable dielectric layer, forming a second flowable dielectric layer over the second semiconductor fin;
• curing the second flowable dielectric layer at a second temperature greater than the first temperature by using a second annealing process;
• and
• replacing the dummy gate structure with a metal gate structure.

A method for manufacturing a semiconductor device, comprising:

• forming a dummy gate structure across first and second semiconductor fins on a substrate;
• after forming the dummy gate structure, forming a first source/drain feature on the first semiconductor fin and a second source/drain feature on the second semiconductor fin;
• forming a first flowable dielectric layer over the first and second source/drain features;
• curing the first flowable dielectric layer at a first temperature;
• removing a first portion of the cured first flowable dielectric layer from above the second source/drain feature;
• after removing the first portion of the cured first flowable dielectric layer, forming a second flowable dielectric layer over the second source/drain feature;
• curing the second flowable dielectric layer at a second temperature different from the first temperature;
• and
• replacing the dummy gate structure with a metal gate structure.