Fabrication of a pair of vertical fin field effect transistors having a merged top source/drain
AssigneeInternational Business Machines Corporation
InventorsKangguo Cheng, Xin Miao, Wenyu Xu, Chen Zhang
Life of this patent
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Abstract
A method of fabricating a vertical fin field effect transistor with a merged top source/drain, including, forming a source/drain layer at the surface of a substrate, forming a plurality of vertical fins on the source/drain layer; forming protective spacers on each of the plurality of vertical fins, forming a sacrificial plug between two protective spacers, forming a filler layer on the protective spacers not in contact with the sacrificial plug, and selectively removing the sacrificial plug to form an isolation region trench between the two protective spacers.
Claims20
A method of fabricating two vertical fin field effect transistors electrically coupled through a merged top source/drain, comprising:
- forming a source/drain layer on a substrate;
- forming at least four vertical fins on the source/drain layer;
- forming a protective spacer on each of the at least four vertical fins;
- forming an isolation region trench between two protective spacers;
- removing the protective spacer on each of the at least four vertical fins;
- forming a dummy layer in the isolation region trench;
- removing at least a portion of the dummy layer to open the isolation region trench;
- and
- forming a trench fill layer in the opened isolation region trench to form an isolation region through the source/drain layer to separate the source/drain layer into a first bottom source/drain and a second bottom source/drain, wherein at least two of the least four vertical fins are on the first bottom source/drain, and at least two of the least four vertical fins are on the second bottom source/drain.
A method of fabricating two vertical fin field effect transistors electrically coupled through a merged top source/drain, comprising:
- forming a source/drain layer on a substrate;
- forming at least four vertical fins on the source/drain layer;
- forming a protective spacer on each of the at least four vertical fins;
- forming an isolation region trench between two protective spacers;
- removing the protective spacer on each of the at least four vertical fins;
- forming a dummy layer in the isolation region trench and on each of the at least four vertical fins;
- removing the dummy layer to open the isolation region trench;
- and
- forming a trench fill layer in the opened isolation region trench to form an isolation region through the source/drain layer to separate the source/drain layer into a first bottom source/drain and a second bottom source/drain, wherein at least two of the least four vertical fins are on the first bottom source/drain, and at least two of the least four vertical fins are on the second bottom source/drain, wherein the at least two vertical fins on the first bottom source/drain are separated by a distance in a range of about 30 nm to about 100 nm, and the at least two vertical fins on the second bottom source/drain are separated by a distance in a range of about 30 nm to about 100 nm.
A method of fabricating two vertical fin field effect transistors electrically coupled through a merged top source/drain, comprising:
- forming a source/drain layer on a substrate;
- forming at least four vertical fins on the source/drain layer;
- forming a protective spacer on each of the at least four vertical fins;
- forming an isolation region trench between two protective spacers;
- removing the protective spacer on each of the at least four vertical fins;
- forming a dummy layer in the isolation region trench and on each of the at least four vertical fins;
- removing at least a portion of the dummy layer to open the isolation region trench;
- and
- forming a trench fill layer in the opened isolation region trench to form an isolation region through the source/drain layer to separate the source/drain layer into a first bottom source/drain and a second bottom source/drain, wherein at least two of the least four vertical fins are on the first bottom source/drain, and at least two of the least four vertical fins are on the second bottom source/drain, wherein the at least two vertical fins on the first bottom source/drain are separated by a distance in a range of about 30 nm to about 100 nm, and the at least two vertical fins on the second bottom source/drain are separated by a distance in a range of about 30 nm to about 100 nm, and wherein one vertical fin on the first bottom source/drain is separated from an adjacent vertical fin on the second bottom source/drain by a distance in the range of about 10 nm to about 40 nm.
Dependencies are inferred from the claim text.