Method of producing microelectronic components

A method for producing at least one microelectronic component on a substrate, which comprises, in an exposed manner on a first face of the substrate, at least one active zone and at least one electrical isolation zone adjacent to the at least one active zone, the at least one active zone extending in a lateral direction along the substrate, the method comprising:

• forming a transistor gate on the at least one active zone and extending across at least a portion of the at least one electrical isolation zone in a direction transverse to the lateral direction;
• forming spacers, each configured to cover a surface of a different edge of the transistor gate;
• forming source and drain zones by doping portions of the at least one active zone adjacent to the transistor gate;
• the method further comprising successively:
• forming a first layer, made of a spacer material, above the at least one active zone and above the at least one electrical isolation zone;
• performing an ion implantation configured to produce a further doping of the portions of the at least one active zone adjacent to the transistor gate through the first layer to finalize the forming of the source and drain zones, the first layer forming a protective coating of the at least one electrical isolation zone during all of the ion implantation and until completion thereof;
• and
• removing a modified portion of the first layer disposed overlooking the at least one active zone and the at least one electrical isolation zone, the modified portion coming from the ion implantation, the removing being configured to at least partially preserve the first layer at a level of edges of the transistor gate.