Fin field effect transistor having air gap and method for manufacturing the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsSai-Hooi Yeong, Kai-Hsuan Lee, Yu-Ming Lin, Chi-On Chui
Life of this patent
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Abstract
A method of manufacturing a FinFET includes at last the following steps. A semiconductor substrate is patterned to form trenches in the semiconductor substrate and semiconductor fins located between two adjacent trenches of the trenches. Gate stacks is formed over portions of the semiconductor fins. Strained material portions are formed over the semiconductor fins revealed by the gate stacks. First metal contacts are formed over the gate stacks, the first metal contacts electrically connecting the strained material portions. Air gaps are formed in the FinFET at positions between two adjacent gate stacks and between two adjacent strained materials.
Claims20
A method of manufacturing a fin field effect transistor (FinFET), comprising:
- patterning a semiconductor substrate to form trenches in the semiconductor substrate and semiconductor fins located between two adjacent trenches of the trenches;
- forming insulators in the trenches, respectively;
- forming gate stacks over portions of the semiconductor fins and portions of the insulators;
- forming strained material portions over the semiconductor fins revealed by the gate stacks;
- forming first metal contacts over the gate stacks, the first metal contacts electrically connecting the strained material portions;
- and
- forming air gaps simultaneously in the FinFET at positions between two adjacent gate stacks of the gate stacks along a lengthwise direction of the semiconductor fins and in at least one of the insulators.
A method of manufacturing a fin field effect transistor (FinFET), comprising:
- providing a semiconductor substrate;
- patterning the semiconductor substrate to form trenches in the semiconductor substrate and semiconductor fins located between two adjacent trenches of the trenches;
- forming insulators in the trenches, respectively;
- forming dummy gate stacks over portions of the semiconductor fins and portions of the insulators;
- forming strained material portions over the semiconductor fins revealed by the dummy gate stacks;
- replacing the dummy gate stacks with gate stacks;
- forming first metal contacts over the gate stacks, the first metal contacts electrically connecting the strained material portions;
- forming second metal contacts over the gate stacks, the second metal contacts electrically connecting the gate stacks;
- and
- forming air gaps simultaneously in the FinFET at positions between two adjacent gate stacks of the gate stacks along a lengthwise direction of the semiconductor fins and in at least one of the insulators.
A fin field effect transistor (FinFET), comprising:
- a semiconductor substrate, comprising trenches and semiconductor fins located between the trenches;
- a plurality of insulators, respectively located in the trenches, and each being between two adjacent semiconductor fins of the semiconductor fins;
- gate stacks, located over the semiconductor substrate, wherein the gate stacks are located over portions of the semiconductor fins and portions of the plurality of insulators;
- strained material portions, covering portions of the semiconductor fins revealed by the gate stacks;
- first metal contacts, located over and electrically connected to the strained material portions;
- and
- second metal contacts, located over and electrically connected to the gate stacks,
- wherein air gaps are simultaneously located in the FinFET at positions between any two adjacent gate stacks of the gate stacks along a lengthwise direction of the semiconductor fins and in at least one of the insulators.
Dependencies are inferred from the claim text.