Dicing method for stacked semiconductor devices
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsTsung-Hsing Lu, Jun He, Li-Huan Chu, Pei-Haw Tsao
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Abstract
A method includes providing first and second wafers; forming a first device layer in a top portion of the first wafer; forming a second device layer in a top portion of the second wafer; forming a first groove in the first device layer; forming a second groove in the second device layer; bonding the first and second wafers together after at least one of the first and second grooves is formed; and dicing the bonded first and second wafers by a cutting process, wherein the cutting process cuts through the first and second grooves.
Claims20
A method, comprising:
- providing first and second wafers;
- forming a first device layer in a top portion of the first wafer;
- forming a second device layer in a top portion of the second wafer;
- forming a first groove in the first device layer;
- forming a second groove in the second device layer;
- bonding the first and second wafers together after at least one of the first and second grooves is formed;
- and
- dicing the bonded first and second wafers by a cutting process, wherein the cutting process cuts through the first and second grooves,
- wherein the first groove has a first sidewall, a cut made by the cutting process has a second sidewall, and the first sidewall has a slope smaller than that of the second sidewall.
A method of fabricating a stacked semiconductor device, comprising:
- providing a first structure having a first substrate and a first device layer on the first substrate;
- providing a second structure having a second substrate and a second device layer on the second substrate;
- forming a second groove in the second device layer;
- bonding a bottom surface of the first substrate to a top surface of the second device layer;
- after the bonding, forming a first groove in the first device layer;
- and
- cutting through the first groove, the first substrate, the second groove, and the second substrate in sequence,
- wherein the first groove has a first sidewall, the first substrate has a second sidewall formed by the cutting, and the first sidewall has a surface roughness larger than that of the second sidewall.
A method of fabricating a stacked semiconductor device, comprising:
- providing a first structure having a first substrate and a first device layer on the first substrate;
- providing a second structure having a second substrate and a second device layer on the second substrate;
- forming a through-substrate-via (TSV) in the first substrate, such that the TSV electrically couples the first device layer to a bond pad at a bottom surface of the first substrate;
- forming a second groove in the second device layer;
- bonding the bottom surface of the first substrate to a top surface of the second device layer, thereby forming bonded first and second structures;
- after the bonding, forming a first groove in the first device layer;
- and
- dicing the bonded first and second structures by a cutting process, wherein the cutting process cuts through the first and second grooves,
- wherein the first groove has a first sidewall, the first substrate has a second sidewall made by the cutting process, and the first sidewall has a slope smaller than that of the second sidewall.
Dependencies are inferred from the claim text.