Method of manufacturing semiconductor device

A method of manufacturing a semiconductor device, the method comprising:

• forming an active pattern on a substrate;
• forming a gate electrode running across the active pattern;
• forming an active contact electrically connected to the active pattern and a gate contact electrically connected to the gate electrode,
• wherein:
• forming the active contact and the gate contact includes:
• forming a first hole exposing the active pattern and a second hole exposing the gate electrode;
• and
• forming a first metal-containing layer in the first hole and the second hole, forming the first metal-containing layer includes:
• providing a first metal precursor on the substrate to form a first preliminary layer that includes a first metal;
• and
• providing a first reducing agent on the first preliminary layer, the first reducing agent including a compound that includes a second metal, the second metal having multiple oxidation states, and the second metal in the first reducing agent having a lower oxidation state among the multiple oxidation states prior to providing the first reducing agent on the first preliminary layer, and
• the second metal is included in the first metal-containing layer in an amount of 0 at % to less than 5 at %.

A method of manufacturing a semiconductor device, the method comprising:

• forming a first region including a plurality of transistors;
• and
• forming a second region stacked on the first region,
• wherein:
• forming the second region includes:
• forming a semiconductor layer on the first region;
• forming an active pattern on the semiconductor layer;
• and
• forming a capacitor electrically connected to the active pattern,
• forming the capacitor includes:
• forming a first electrode;
• forming a dielectric layer on the first electrode;
• and
• forming a second electrode on the dielectric layer,
• forming the first electrode or the second electrode includes:
• providing a metal precursor on the semiconductor layer to form a preliminary layer that includes a first metal;
• and
• providing a reducing agent on the preliminary layer, the reducing agent including a compound that includes a second metal, the second metal having multiple oxidation states, and the second metal in the reducing agent having a lower oxidation state among the multiple oxidation states prior to providing the reducing agent on the preliminary layer, and
• the second metal is included in the first electrode or the second electrode in an amount of 0 at % to less than 5 at %.