Creating an aligned via and metal line in an integrated circuit including forming an oversized via mask

A processing system for processing a substrate and forming an integrated circuit, wherein the processing system comprises:

• a processor;
• a memory;
• and
• one or more applications stored in the memory and including instructions, which are executable by the processor to
• form a dielectric layer, a hard mask layer, a film layer and a photoresist layer;
• pattern the photoresist layer to form a via mask, wherein the via mask is oversized, such that the via mask extends across opposing sides of a metal line mask in the hard mask layer;
• etch the film layer and the dielectric layer based on the patterned photoresist layer;
• ash the photoresist layer and the film layer;
• etch the dielectric layer based on a pattern of the hard mask layer to provide a via region and a metal line region;
• etch the hard mask layer and the dielectric layer;
• and
• perform a plurality of dual damascene process operations to form a via in the via region and a metal line in the metal line region in the integrated circuit.