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US 11,081,384 B2Granted
Method for stabilizing a semiconductor arrangement
AssigneeInfineon Technologies AG
InventorsHermann Gruber, Joerg Busch
Life of this patent
Estimating the term…
Abstract
A method includes producing a semiconductor arrangement having a semiconductor layer, a first insulation layer arranged on the semiconductor layer and facing a first surface of the semiconductor arrangement, and an insulating via extending in a vertical direction through the semiconductor layer as far as the first insulation layer, the insulating via surrounding a region of the semiconductor layer in a ring-shaped fashion. The method further includes permanently securing a first carrier to the first surface of the semiconductor arrangement.
Claims20
A method, comprising:
- producing a semiconductor arrangement having a semiconductor layer, a first insulation layer arranged on the semiconductor layer and facing a first surface of the semiconductor arrangement, and an insulating via extending in a vertical direction through the semiconductor layer as far as the first insulation layer, the insulating via surrounding a region of the semiconductor layer in a ring-shaped fashion;
- permanently securing a first carrier to the first surface of the semiconductor arrangement;
- before permanently securing the first carrier to the first surface of the semiconductor arrangement, securing a second carrier to a second surface of the semiconductor arrangement, the second surface facing away from the first surface;
- and
- after permanently securing the first carrier to the first surface of the semiconductor arrangement, removing the second carrier from the second surface.
2 more elements
Dependencies are inferred from the claim text.