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US 11,081,367 B2Granted
Support and method for producing semiconductor device-mounting substrate using the same
AssigneeMitsubishi Gas Chemical Company, Inc.
InventorsShunsuke Hirano, Yoshihiro Kato, Takaaki Ogashiwa, Kazuaki Kawashita
Life of this patent
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Abstract
A support including a heat resistant film layer and a resin layer, wherein the heat resistant film layer is laminated on at least one side (a first side) of the resin layer, and the resin layer is in a semi-cured state (B stage).
Claims16
A support comprising:
- a heat resistant film layer;
- a resin layer;
- and
- a copper foil,
- wherein the heat resistant film layer is laminated on at least one side (a first side) of the resin layer, and the resin layer is in a semi-cured state (B stage);
- wherein the copper foil is laminated on another side (a second side) of the resin layer, the second side being opposed to the side on which the heat resistant film layer is laminated;
- wherein the heat resistant film layer is a resin selected from the group consisting of polyimide resins, polyamideimide resins, nylon resins, fluorine-based resins, and mixtures of two or more thereof;
- wherein an adhesive layer contacts the heat resistant film layer, and the adhesive layer comprises at least one resin selected from the group consisting of phenol resins, epoxy resins, cyanate resins, maleimide resins, isocyanate resins, benzocyclobutene resins and vinyl resins.
5 more elements
Dependencies are inferred from the claim text.