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US 11,081,365 B2Granted
Treatment to interface between metal film and BARC or photoresist
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChung-Hao Chang, Chih-Jen Yu, Keh-Wen Chang
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Abstract
A method of manufacturing a semiconductor device is disclosed. In the method, a metallic layer is formed over a substrate, the metallic layer is surface-treated with an alkaline solution, and a bottom anti-reflective coating (BARC) layer is formed on the surface-treated metallic layer.
Claims20
A method of manufacturing a semiconductor device, comprising:
- forming a metallic layer over a substrate;
- surface treating the metallic layer with an alkaline solution;
- and
- forming a bottom anti-reflective coating (BARC) layer on the surface-treated metallic layer.
1 more element
A method of manufacturing a semiconductor device, comprising:
- forming a metallic layer over at least one fin disposed on a substrate;
- converting a surface of the metallic layer to be hydrophilic by a wet process;
- and
- forming an organic bottom anti-reflective coating (BARC) on the hydrophilic surface of the metallic layer.
1 more element
A pattern forming method, comprising:
- forming a metallic layer over a substrate;
- treating a surface of the metallic layer with an alkaline solution;
- forming an organic bottom anti-reflective coating layer (BARC) on the surface treated metallic layer;
- forming a photo resist layer on the BARC layer;
- exposing the photo resist layer with an exposure energy beam via a photo mask;
- and
- developing the exposed photo resist.
4 more elements
Dependencies are inferred from the claim text.