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US 11,081,358 B2Granted
Silicide film nucleation
AssigneeApplied Materials, Inc.
InventorsXuebin Li, Errol Antonio C. Sanchez, Patricia M. Liu
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Abstract
Embodiments disclosed herein are directed to forming MOSFET devices. In particular, one or more pre-silicide treatments are performed on a substrate prior to the deposition of the metal-silicide layer to improve the density and performance of the metal-silicide layer in the MOSFETs. The metal-silicide formation formed with the pre-silicide treatment(s) can occur before or after the formation of metal gates during MOSFET fabrication.
Claims13
A method of forming a metal-silicide, comprising:
- forming a seed layer on a substrate, wherein the seed layer comprises a doped silicon layer from 1 nm to 5 nm thick;
- and
- subsequently, forming, by CVD deposition, a metal-silicide layer on the seed layer, wherein forming the metal-silicide layer consumes a first portion of the seed layer, and wherein a second portion of the seed layer remains on the substrate after forming the metal-silicide layer.
A method of forming a metal-silicide, comprising:
- performing a pre-silicide treatment on a substrate, wherein the pre-silicide treatment comprises one or more of:
- forming a seed layer, wherein the seed layer is from 1 nm to 5 nm thick and comprises a dopant concentration from 1E19 atoms/cm3 to 1E23 atoms/cm3;
- exposing the substrate to one or more precursor sources to form a doped surface of the substrate;
- implanting a dopant in the substrate;
- and
- etching a surface of the substrate;
- and
- subsequent to performing the pre-silicide treatment on the substrate, forming, by CVD deposition, a metal-silicide layer on the treated substrate.
5 more elements
Dependencies are inferred from the claim text.