Method for metal gate cut and structure thereof

A method, comprising:

• providing a structure having a substrate and a dielectric fin projecting upwardly above the substrate;
• forming first and second spacer layers on the dielectric fin, wherein the first and second spacer layers have two opposing sidewalls;
• removing a portion of the dielectric fin between the two opposing sidewalls;
• forming a gate structure between the two opposing sidewalls;
• depositing a capping layer on the gate structure;
• after the depositing of the capping layer, removing another portion of the dielectric fin, thereby exposing sidewalls of the gate structure;
• and
• performing a lateral etching process on the sidewalls of the gate structure, thereby dividing the gate structure into two parts.

A method of manufacturing a semiconductor device, comprising:

• providing a structure having a dielectric fin over a substrate;
• forming a sacrificial gate over a middle portion of the dielectric fin;
• forming gate spacers on sidewalls of the sacrificial gate;
• removing the sacrificial gate and the middle portion of the dielectric fin, thereby forming a gate trench between the gate spacers;
• forming a metal gate in the gate trench;
• removing at least a side portion of the dielectric fin, thereby exposing at least a sidewall of the metal gate;
• and
• after the removing of the side portion of the dielectric fin, etching the exposed sidewall of the metal gate, thereby separating the metal gate into first and second metal gate segments.