Fin patterning methods for increased process margins
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChin-Yuan Tseng, Wei-Liang Lin, Li-Te Lin, Ru-Gun Liu, Min Cao
Life of this patent
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Abstract
The present disclosure provides a method in accordance with some embodiments. The method includes forming a mandrel over a substrate, the mandrel having a first sidewall and a second sidewall opposing the first sidewall; forming a first fin on the first sidewall and a second fin on the second sidewall; depositing a dielectric material covering the first fin, the second fin, and the mandrel; partially removing the dielectric material, thereby exposing the second fin; etching the second fin without etching the first fin and the mandrel; removing the dielectric material; and removing the mandrel.
Claims20
A method, comprising:
- forming a mandrel over a substrate, the mandrel having a first sidewall and a second sidewall opposing the first sidewall;
- forming a first fin on the first sidewall and a second fin on the second sidewall;
- depositing a dielectric material covering the first fin, the second fin, and the mandrel;
- partially removing the dielectric material, thereby exposing the second fin, wherein a portion of a top surface of the second fin remains covered by the dielectric material;
- etching the second fin without etching the first fin and the mandrel;
- removing the dielectric material;
- and
- removing the mandrel.
A method, comprising:
- forming a first mandrel and a second mandrel on a substrate;
- forming a first fin and a second fin between the first and second mandrels, wherein the first fin is in physical contact with the first mandrel and the second fin is in physical contact with the second mandrel;
- depositing a dielectric material between the first and second fins, the dielectric material also covers top surfaces of the first and second mandrels;
- removing a portion of the dielectric material to form an opening, thereby exposing the first and second fins;
- removing the first and second fins through the opening;
- and
- removing the dielectric material and the first and second mandrels.
A method, comprising:
- forming a sacrificial layer over a substrate;
- patterning the sacrificial layer to form a plurality of mandrels;
- depositing spacers on sidewalls of each of the plurality of mandrels;
- depositing a guarding material covering and in physical contact with the spacers and the plurality of mandrels, wherein the guarding material exhibits etching selectivity to both the spacers and the plurality of mandrels;
- performing a first etching process to form an opening in the guarding material, thereby exposing a subset of the spacers;
- performing a second etching process through the opening to remove each spacer in the subset;
- and
- performing a third etching process to remove the plurality of mandrels.
Dependencies are inferred from the claim text.