Method (and related apparatus) that reduces cycle time for forming large field integrated circuits

An integrated circuit, comprising:

• a semiconductor substrate;
• a first integrated circuit unit (ICU) disposed over a first region of the semiconductor substrate, wherein the first ICU comprises:
• a first plurality of semiconductor devices that are interconnected together by a first plurality of conductive features;
• and
• a first conductive via disposed over and electrically coupled to the first plurality of conductive features;
• a second ICU disposed over a second region of the semiconductor substrate, wherein the second ICU comprises:
• a second plurality of semiconductor devices that are interconnected together by a second plurality of conductive features;
• and
• a second conductive via disposed over and electrically coupled to the second plurality of conductive features, wherein the second conductive via is laterally spaced from the first conductive via;
• an isolation region disposed between the first ICU and the second ICU, wherein the isolation region electrically isolates the first plurality of conductive features from the second plurality of conductive features;
• a passivation layer overlying the first ICU, the isolation region, and the second ICU;
• and
• a conductive layer disposed over the passivation layer and electrically coupling the first conductive via to the second conductive via, such that the first ICU is electrically coupled to the second ICU, wherein the conductive layer extends vertically from the first conductive via, laterally over an uppermost surface of the passivation layer, and vertically to the second conductive via.

An integrated circuit, comprising:

• an inter-metal dielectric (IMD) layer disposed over a semiconductor substrate;
• a passivation layer disposed over the IMD layer;
• a first integrated circuit unit (ICU) disposed over a first region of the semiconductor substrate, wherein the first ICU comprises:
• a plurality of first semiconductor devices that are interconnected together by a plurality of first conductive features, wherein the first conductive features are disposed in a first portion of the IMD layer;
• and
• a first conductive via electrically coupled to the first conductive features, wherein the first conductive via extends vertically through the passivation layer;
• a second ICU disposed over a second region of the semiconductor substrate, wherein the second ICU comprises:
• a plurality of second semiconductor devices that are interconnected together by a plurality of second conductive features, wherein the second conductive features are disposed in a second portion of the IMD layer;
• and
• a second conductive via electrically coupled to the second conductive features, wherein the second conductive via is laterally spaced from the first conductive via and extends vertically through the passivation layer;
• an isolation region disposed between the first ICU and the second ICU, wherein the isolation region comprises:
• one or more of the first conductive features;
• one or more of the second conductive features;
• and
• a third portion of the IMD layer that electrically isolates the one or more of the first conductive features from the one or more of the second conductive features;
• and
• a conductive layer disposed over the passivation layer and electrically coupling the first conductive via to the second conductive via, such that the first ICU is electrically coupled to the second ICU.