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US 11,081,344 B2Granted
Method for manufacturing semiconductor substrate
AssigneeFUJIFILM Business Innovation Corp.
InventorsAtsushi Fukugawa, Michiaki Murata
Life of this patent
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Abstract
Provided is a method for manufacturing a semiconductor substrate including: preparing a semiconductor substrate having a front surface on which an epitaxial layer has been formed; and forming a fracture layer on a rear surface of the semiconductor substrate before forming elements on the epitaxial layer.
Claims18
A method for manufacturing a semiconductor substrate comprising:
- preparing a semiconductor substrate having a front surface on which an epitaxial layer has been formed;
- and
- forming a fracture layer on a rear surface of the semiconductor substrate before forming elements on the epitaxial layer;
- wherein
- the forming of the fracture layer forms the fracture layer by grinding the rear surface of the semiconductor substrate,
- the forming of the fracture layer by grinding comprises selecting an abrasive-grain diameter according to the amount of warpage of the semiconductor substrate, and
- the abrasive-grain diameter is selected according to the amount of the warpage of the semiconductor before forming the fracture layer.
4 more elements
A method for manufacturing a semiconductor substrate comprising:
- preparing a semiconductor substrate having a front surface on which an epitaxial layer has been formed;
- forming a fracture layer on a rear surface of the semiconductor substrate before forming elements on the epitaxial layer;
- and
- forming a protective film on a surface of the fracture layer before forming the elements on the epitaxial layer;
- wherein
- the forming of the fracture layer forms the fracture layer by grinding the rear surface of the semiconductor substrate, and
- the forming of the fracture layer by grinding comprises selecting an abrasive-grain diameter according to the amount of warpage of the semiconductor substrate.
4 more elements
A method for manufacturing a semiconductor substrate, comprising:
- preparing a substrate having a front surface on which an epitaxial layer has been formed;
- grinding a rear surface of the substrate before forming elements on the epitaxial layer;
- and
- forming a protective film on a surface of the fracture layer before forming the elements on the epitaxial layer;
- wherein
- the forming of the fracture layer forms the fracture layer by grinding the rear surface of the semiconductor substrate, and
- the forming of the fracture layer by grinding comprises selecting an abrasive-grain diameter according to the amount of warpage of the semiconductor substrate.
4 more elements
Dependencies are inferred from the claim text.