Apparatus for fabricating a semiconductor device with target sputtering and target sputtering method for fabricating the semiconductor device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsShih Wei Bih, Yen-Yu Chen, Yi-Ming Dai
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Abstract
The present disclosure provides an apparatus for fabricating a semiconductor device with target sputtering, including a chamber for accommodating a consumable target, a target accumulative consumption counter, wherein the target accumulative consumption counter provides a signal correlated to an amount of the consumable target being consumed, and a power supply communicates with the consumable target counter, wherein the power supply provides a power output according to the signal.
Claims20
A method for fabricating a semiconductor device with target sputtering, comprising:
- providing a chamber;
- loading a substrate in the chamber;
- providing a consumable target in the chamber, wherein the consumable target faces the substrate;
- providing a power output electrically coupled to the consumable target to apply a bias voltage on the consumable target and the substrate;
- and
- adjusting a magnitude of the power output according to an accumulative consumption of the consumable target, wherein the magnitude of the power output continuously increases throughout consumption of the consumable target.
A method for fabricating a semiconductor device with target sputtering, comprising:
- placing a wafer in a chamber;
- providing a consumable target in the chamber;
- providing a power output to the consumable target;
- and
- sputtering a material of the consumable target over the wafer, comprising:
- continuously increasing a magnitude of the power output electrically coupled to the consumable target from the beginning of the sputtering and until the sputtering is terminated;
- and
- maintaining a deposition rate of the material to be greater than a predetermined lower limit before the sputtering is terminated.
A method for fabricating a semiconductor device with target sputtering, comprising:
- providing a chamber;
- loading a substrate in the chamber;
- providing a consumable target in the chamber, wherein the consumable target comprises a first material;
- supplying nitride gas into the chamber;
- providing a power output to the consumable target;
- forming a material layer over the wafer by sputtering the consumable target;
- detecting a concentration ratio of the first material over nitride in the material layer prior to the termination of the sputtering;
- and
- adjusting a magnitude of the power output according to the detected concentration ratio of the first material over nitride in the material layer prior to the termination of the sputtering.
Dependencies are inferred from the claim text.