Single-crystal rare earth oxide grown on III-V compound
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsKuanhsiung Chen, Minghwei Hong, Jueinai Kwo, Yen-Hsun Lin, Keng-Yung Lin
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Abstract
A substrate with a (001) orientation is provided. A gallium arsenide (GaAs) layer is epitaxially grown on the substrate. The GaAs layer has a reconstruction surface that is a 4×6 reconstruction surface, a 2×4 reconstruction surface, a 3×2 reconstruction surface, a 2×1 reconstruction surface, or a 4×4 reconstruction surface. Via an atomic layer deposition process, a single-crystal structure yttrium oxide (Y2O3) layer is formed on the reconstruction surface of the GaAs layer. The atomic layer deposition process includes water or ozone gas as an oxygen source precursor and a cyclopentadienyl-type compound as an yttrium source precursor.
Claims20
A semiconductor device, comprising:
- a substrate having a (001) orientation according to a Miller Index;
- a III-V compound epi-layer disposed on the substrate, wherein the III-V compound epi-layer has a reconstruction surface that is a 3×2 reconstruction surface or a 4×4 reconstruction surface, wherein the III-V compound epi-layer has a single crystal structure;
- and
- a rare earth oxide layer disposed on the reconstruction surface of the III-V compound epi-layer, wherein the rare earth oxide layer has a single-crystal structure, wherein an interface between the III-V compound epi-layer and the rare earth oxide layer has a roughness that is less than about 0.5 nanometers and is thermally stable up to about 950 degrees Celsius.
A semiconductor device, comprising:
- a substrate having a (001) orientation according to a Miller Index;
- a MN compound layer epitaxially grown on the substrate, wherein the III-V compound layer includes an element from a “μl” group of a periodic table and an element from a “V” group of the periodic table, and wherein the MN compound layer has a reconstruction surface that is a 3×2 reconstruction surface or a 4×4 reconstruction surface;
- and
- a rare earth oxide layer formed directly on, and in physical contact with, the reconstruction surface of the MN compound layer, wherein the rare earth oxide layer is a part of a gate dielectric of a transistor;
- wherein:
- the III-V compound layer and the rare earth layer each have a single-crystal structure;
- and
- an interface between the III-V compound layer and the rare earth layer has a roughness that is less than about 0.5 nanometers and is thermally stable up to about 950 degrees Celsius.
A semiconductor device, comprising:
- a substrate having a (001) orientation according to a Miller Index, wherein the substrate contains a single-crystal material or a III-V compound material;
- a first layer epitaxially grown on the substrate, wherein the first layer contains gallium arsenide (GaAs), gallium indium arsenide (GaInAs), gallium antimonide (GaSb), indium arsenide (InAs), indium phosphide (InP), gallium indium phosphide (GaInP), or gallium indium antimonide (GaInSb), and wherein the first layer has a reconstruction surface that is one of:
- a 3×2 reconstruction surface, a 2×1 reconstruction surface, or a 4×4 reconstruction surface;
- and
- a second layer disposed on the reconstruction surface of the first layer, wherein the second layer contains:
- yttrium oxide (Y2O3), scandium oxide (Sc2O3), lanthanum oxide (La2O3), cerium oxide (Ce2O3), praseodymium oxide (Pr2O3), neodymium oxide (Nd2O3), samarium oxide (Sm2O3), europium oxide (Eu2O3), gadolinium oxide (Gd2O3), dysprosium oxide (Dy2O3), holmium oxide (Ho2O3), erbium oxide (Er2O3), lutetium oxide (Lu2O3), yttrium aluminum oxide (YAlO3), lanthanum aluminum oxide (LaAlO3), lanthanum lutetium oxide (LaLuO3), lanthanum gallium oxide (LaGaO3), or neodymium aluminum oxide (NdAlO3);
- wherein:
- the first layer and the second each have a single-crystal structure;
- and
- an interface between the first layer and the second layer has a roughness that is less than about 0.5 nanometers and is thermally stable up to about 950 degrees Celsius.
Dependencies are inferred from the claim text.