Method of forming oxide film including two non-oxygen elements, method of manufacturing semiconductor device, method of forming dielectric film, and semiconductor device

A method of manufacturing a semiconductor device, the method comprising:

• forming a lower electrode that is electrically connected to an active region of a semiconductor substrate;
• forming a dielectric film on an exposed surface of the lower electrode;
• and
• forming an upper electrode on the dielectric film,
• wherein the forming of the dielectric film comprises:
• providing a first source material on the exposed surface of the lower electrode;
• providing an electron donor compound that is capable of forming a van der Waals bond with the first source material;
• providing a second source material on the lower electrode after the providing of the electron donor compound;
• and
• providing an oxidant on the lower electrode.

A method of forming a dielectric film, the method comprising:

• providing a substrate into a reaction chamber;
• providing a first electron donor compound on the substrate;
• and
• repeating a deposition cycle until an oxide film is formed on the substrate to a set thickness,
• wherein the deposition cycle comprises:
• providing a first source material on the substrate, the first source material comprising a first central element;
• providing a second electron donor compound to be bonded to the first source material;
• providing a second source material on the substrate after the providing of the second electron donor compound, the second source material comprising a second central element;
• and
• providing an oxidant on the substrate.