US 11,081,337 B2 · Formulation for deposition of silicon doped hafnium oxide as ferroelectric materials

Abstract

In one aspect, the invention is formulations comprising both organoaminohafnium and organoaminosilane precursors that allows anchoring both silicon-containing fragments and hafnium-containing fragments onto a given surface having hydroxyl groups to deposit silicon doped hafnium oxide having a silicon doping level ranging from 0.5 to 8 mol %, preferably 2 to 6 mol %, most preferably 3 to 5 mol %, suitable as ferroelectric material. In another aspect, the invention is methods and systems for depositing the silicon doped hafnium oxide films using the formulations.

Claims18

Dependent claims

An Atomic Layer Deposition or a Plasma Enhanced Atomic Layer Deposition composition for depositing a silicon doped hafnium oxide film comprising:

1) at least one organoaminosilane precursor compound having a formula of RxR3Si(NR1R2)3-x;
wherein
R is a linear or branched C1 to C6 alkyl;
R1, R2 and R3 are independently selected from linear or branched C1 to C6 alkyl;
wherein
R1 and R2 in organoamino group are linked to form a cyclic ring structure;
or not linked to form a cyclic ring structure;
and
x=0, 1, or 2;
and
(b) at least one organoaminohafnium precursor compound having a formula of
LxHf(NR1R2)4-x;
wherein
L is cyclopentadienyl or alkyl substituted cyclopentadienyl;
R1 and R2 are independently selected from linear or branched C1 to C6 alkyl in organoamino group;
wherein
R1 and R2 are linked to form a cyclic ring structure or R1 and R2 are not linked to form a cyclic ring structure;
and
x=0, 1, or 2;
wherein melting point of the composition is ≤30° C.;
and
the at least one organoaminosilane precursor and the at least one organoaminohafnium precursor have the same organoamino group.

19 more elements

A system to deposit a film comprising silicon, hafnium and oxygen onto a substrate, comprising:

the substrate in a reactor;
and
an Atomic Layer Deposition or a Plasma Enhanced Atomic Layer Deposition composition comprising:
(i) at least one organoaminosilane precursor compound having a formula of
RxR3Si(NR1R2)3-x;
wherein
R is a linear or branched Ci to C6 alkyl;
R1, R2 and R3 are independently selected from linear or branched C1 to C6 alkyl;
wherein
R1 and R2 in organoamino group are linked to form a cyclic ring structure;
or not linked to form a cyclic ring structure;
and
x=0, 1, or 2;
and
(ii) at least one organoaminohafnium precursor compound having a formula of
LxHf(NR1R2)4-x;
wherein
L is cyclopentadienyl or alkyl substituted cyclopentadienyl;
R1 and R2 are independently selected from linear or branched C1 to C6 alkyl in organoamino group;
wherein
R1 and R2 are linked to form a cyclic ring structure or R1 and R2 are not linked to form a cyclic ring structure;
and
x=0, 1, or 2;
wherein
a melting point of the composition is ≤30° C.;
the at least one organoaminosilane precursor and the at least one organoaminohafnium precursor have the same organoamino group;
and
the system is at a temperature ranging from 100° C. to 350° C.

25 more elements

A silicon doped hafnium oxide film suitable as ferroelectric materials deposited by using an Atomic Layer Deposition or a Plasma Enhanced Atomic Layer Deposition composition comprising

(1) at least one organoaminosilane precursor compound having a formula of
RxR3Si(NR1R2)3-x;
wherein
R is a linear or branched C1 to C6 alkyl;
R1, R2 and R3 are independently selected from linear or branched C1 to C6 alkyl;
wherein
R1 and R2 in organoamino group are linked to form a cyclic ring structure;
or not linked to form a cyclic ring structure;
and
x=0, 1, or 2;
and
(2) at least one organoaminohafnium precursor compound having a formula of
LxHf(NR1R2)4-x;
wherein
L is cyclopentadienyl or alkyl substituted cyclopentadienyl;
R1 and R2 are independently selected from linear or branched C1 to C6 alkyl;
wherein
R1 and R2 are linked to form a cyclic ring structure or R1 and R2 are not linked to form a cyclic ring structure;
and
x=0, 1, or 2;
and
wherein
a melting point of the composition is ≤30° C.;
the at least one organoaminosilane precursor and the at least one organoaminohafnium precursor have the same organoamino group;
deposition process is selected from the group consisting of a thermal atomic layer deposition (ALD), plasma enhanced atomic layer deposition (PEALD) process, and combination thereof;
and
the silicon doped hafnium oxide film having a silicon doping level ranging from 2.00 to 6.00 mol %.

24 more elements

A vessel employing an Atomic Layer Deposition or a Plasma Enhanced Atomic Layer Deposition composition comprising

(1) at least one organoaminosilane precursor compound having a formula of
RxR3Si(NR1R2)3-x;
wherein
R is a linear or branched C1 to C6 alkyl;
R1, R2 and R3 are independently selected from linear or branched C1 to C6 alkyl;
wherein
R1 and R2 in organoamino group are linked to form a cyclic ring structure;
or not linked to form a cyclic ring structure;
x=0, 1, or 2;
and
(2) at least one organoaminohafnium precursor compound having a formula of
LxHf(NR1R2)4-x;
wherein
L is cyclopentadienyl or alkyl substituted cyclopentadienyl;
R1 and R2 are independently selected from linear or branched C1 to C6 alkyl in organoamino group;
wherein
R1 and R2 are linked to form a cyclic ring structure or R1 and R2 are not linked to form a cyclic ring structure;
and
x=0, 1, or 2;
wherein
a melting point of the composition is ≤30° C.;
the at least one organoaminosilane precursor and the at least one organoaminohafnium precursor have the same organoamino group;
and
the vessel is a pressurizable vessel comprising valves and fittings to allow the delivery of the composition to a reactor fora deposition process selected from the group consisting of a thermal atomic layer deposition (ALD), plasma enhanced atomic layer deposition (PEALD) process, and combination thereof.

21 more elements

Dependencies are inferred from the claim text.

Facts

Application

15/914,968Filed 7 Mar 2018 · us provisional application

Priority

15 Mar 2017

Published

US 2018/0269057 A120 Sep 2018

Granted

3 Aug 2021

Term ends

Not estimatedThe source records don’t support an estimate.

Classification22 codes

H10P 14/693
The material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides: the material…
C09D 1/00
Coating compositions
C09D 5/24
Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced ; Filling pastes:…
C23C 16/401
Oxides: containing silicon

Abstract

Claims18

Dependent claims

An Atomic Layer Deposition or a Plasma Enhanced Atomic Layer Deposition composition for depositing a silicon doped hafnium oxide film comprising:

1) at least one organoaminosilane precursor compound having a formula of RxR3Si(NR1R2)3-x;
wherein
R is a linear or branched C1 to C6 alkyl;
R1, R2 and R3 are independently selected from linear or branched C1 to C6 alkyl;
wherein
R1 and R2 in organoamino group are linked to form a cyclic ring structure;
or not linked to form a cyclic ring structure;
and
x=0, 1, or 2;
and
(b) at least one organoaminohafnium precursor compound having a formula of
LxHf(NR1R2)4-x;
wherein
L is cyclopentadienyl or alkyl substituted cyclopentadienyl;
R1 and R2 are independently selected from linear or branched C1 to C6 alkyl in organoamino group;
wherein
R1 and R2 are linked to form a cyclic ring structure or R1 and R2 are not linked to form a cyclic ring structure;
and
x=0, 1, or 2;
wherein melting point of the composition is ≤30° C.;
and
the at least one organoaminosilane precursor and the at least one organoaminohafnium precursor have the same organoamino group.

19 more elements

A system to deposit a film comprising silicon, hafnium and oxygen onto a substrate, comprising:

the substrate in a reactor;
and
an Atomic Layer Deposition or a Plasma Enhanced Atomic Layer Deposition composition comprising:
(i) at least one organoaminosilane precursor compound having a formula of
RxR3Si(NR1R2)3-x;
wherein
R is a linear or branched Ci to C6 alkyl;
R1, R2 and R3 are independently selected from linear or branched C1 to C6 alkyl;
wherein
R1 and R2 in organoamino group are linked to form a cyclic ring structure;
or not linked to form a cyclic ring structure;
and
x=0, 1, or 2;
and
(ii) at least one organoaminohafnium precursor compound having a formula of
LxHf(NR1R2)4-x;
wherein
L is cyclopentadienyl or alkyl substituted cyclopentadienyl;
R1 and R2 are independently selected from linear or branched C1 to C6 alkyl in organoamino group;
wherein
R1 and R2 are linked to form a cyclic ring structure or R1 and R2 are not linked to form a cyclic ring structure;
and
x=0, 1, or 2;
wherein
a melting point of the composition is ≤30° C.;
the at least one organoaminosilane precursor and the at least one organoaminohafnium precursor have the same organoamino group;
and
the system is at a temperature ranging from 100° C. to 350° C.

25 more elements

A silicon doped hafnium oxide film suitable as ferroelectric materials deposited by using an Atomic Layer Deposition or a Plasma Enhanced Atomic Layer Deposition composition comprising

(1) at least one organoaminosilane precursor compound having a formula of
RxR3Si(NR1R2)3-x;
wherein
R is a linear or branched C1 to C6 alkyl;
R1, R2 and R3 are independently selected from linear or branched C1 to C6 alkyl;
wherein
R1 and R2 in organoamino group are linked to form a cyclic ring structure;
or not linked to form a cyclic ring structure;
and
x=0, 1, or 2;
and
(2) at least one organoaminohafnium precursor compound having a formula of
LxHf(NR1R2)4-x;
wherein
L is cyclopentadienyl or alkyl substituted cyclopentadienyl;
R1 and R2 are independently selected from linear or branched C1 to C6 alkyl;
wherein
R1 and R2 are linked to form a cyclic ring structure or R1 and R2 are not linked to form a cyclic ring structure;
and
x=0, 1, or 2;
and
wherein
a melting point of the composition is ≤30° C.;
the at least one organoaminosilane precursor and the at least one organoaminohafnium precursor have the same organoamino group;
deposition process is selected from the group consisting of a thermal atomic layer deposition (ALD), plasma enhanced atomic layer deposition (PEALD) process, and combination thereof;
and
the silicon doped hafnium oxide film having a silicon doping level ranging from 2.00 to 6.00 mol %.

24 more elements

A vessel employing an Atomic Layer Deposition or a Plasma Enhanced Atomic Layer Deposition composition comprising

(1) at least one organoaminosilane precursor compound having a formula of
RxR3Si(NR1R2)3-x;
wherein
R is a linear or branched C1 to C6 alkyl;
R1, R2 and R3 are independently selected from linear or branched C1 to C6 alkyl;
wherein
R1 and R2 in organoamino group are linked to form a cyclic ring structure;
or not linked to form a cyclic ring structure;
x=0, 1, or 2;
and
(2) at least one organoaminohafnium precursor compound having a formula of
LxHf(NR1R2)4-x;
wherein
L is cyclopentadienyl or alkyl substituted cyclopentadienyl;
R1 and R2 are independently selected from linear or branched C1 to C6 alkyl in organoamino group;
wherein
R1 and R2 are linked to form a cyclic ring structure or R1 and R2 are not linked to form a cyclic ring structure;
and
x=0, 1, or 2;
wherein
a melting point of the composition is ≤30° C.;
the at least one organoaminosilane precursor and the at least one organoaminohafnium precursor have the same organoamino group;
and
the vessel is a pressurizable vessel comprising valves and fittings to allow the delivery of the composition to a reactor fora deposition process selected from the group consisting of a thermal atomic layer deposition (ALD), plasma enhanced atomic layer deposition (PEALD) process, and combination thereof.

21 more elements

Dependencies are inferred from the claim text.

Formulation for deposition of silicon doped hafnium oxide as ferroelectric materials

Life of this patent

Abstract

Claims18

Formulation for deposition of silicon doped hafnium oxide as ferroelectric materials

Life of this patent

Abstract

Claims18