Sputtering target and method for manufacturing the same
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Motoki Nakashima, Haruyuki Baba
Life of this patent
Estimating the term…
Abstract
A novel metal oxide or a novel sputtering target is provided. A sputtering target includes a conductive material and an insulating material. The insulating material includes an oxide, a nitride, or an oxynitride including an element M1. The element M1 is one or more kinds of elements selected from Al, Ga, Si, Mg, Zr, Be, and B. The conductive material includes an oxide, a nitride, or an oxynitride including indium and zinc. A metal oxide film is deposited using the sputtering target in which the conductive material and the insulating material are separated from each other.
Claims16
A sputtering target comprising:
- a first region comprising indium, zinc and an element M1;
- and
- a second region comprising indium, zinc, and an element M2,
- wherein the element M1 is one or more kinds of elements selected from Al, Si, Mg, Zr, Be and B,
- wherein the element M2 is one or more kinds of elements selected from Ti, Ge, Sn, V, Ni, Mo, W, and Ta,
- wherein an atomic ratio of indium in the second region is higher than an atomic ratio of the element M1 in the first region,
- wherein the first region has higher resistance than the second region,
- wherein one of the first region and the second region has a nano-crystal structure, and
- wherein the sputtering target is capable of forming a channel region of a metal oxide.
A sputtering target comprising:
- a first region comprising indium, zinc and an element M1;
- and
- a second region comprising indium, zinc, and an element M2,
- wherein the element M1 is one or more kinds of elements selected from Al, Ga, Si, Mg, Zr, Be and B,
- wherein the element M2 is one or more kinds of elements selected from Ti, Ge, Sn, V, Ni, Mo, W, and Ta,
- wherein an atomic ratio of indium in the second region is higher than an atomic ratio of the element M1 in the first region,
- wherein one of the first region and the second region has a nano-crystal structure, and
- wherein the first region has higher resistance than the second region.
A sputtering target comprising:
- a first region comprising indium, zinc and an element M1;
- and
- a second region comprising indium and an element M2,
- wherein the element M1 is one or more kinds of elements selected from Al, Si, Mg, Zr, Be and B,
- wherein the element M2 is one or more kinds of elements selected from Ti, Ge, Sn, V, Ni, Mo, W, and Ta,
- wherein an atomic ratio of indium in the second region is higher than an atomic ratio of the element M1 in the first region,
- wherein the first region has higher resistance than the second region, and
- wherein the sputtering target is capable of forming a channel region of a metal oxide.
Dependencies are inferred from the claim text.