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US 11,081,318 B2Granted
Geometrically selective deposition of dielectric films utilizing low frequency bias
AssigneeApplied Materials, Inc.
InventorsKenichi Ohno, Keiichi Tanaka, Li-Qun Xia, Tsutomu Tanaka, Dmitry A. Dzilno, Mario D. Silvetti, John C. Forster, Rakesh Ramadas, Mike Murtagh, Alexander V. Garachtchenko
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Abstract
Apparatus and methods for depositing and treating or etching a film are described. A batch processing chamber includes a plurality of processing regions with at least one plasma processing region. A low frequency bias generator is connected to a susceptor assembly to intermittently apply a low frequency bias to perform a directional treatment or etching the deposited film.
Claims20
A processing chamber comprising:
- a susceptor assembly having a top surface and a central axis to rotate a plurality of substrates positioned on the top surface around the central axis of the susceptor assembly;
- a gas distribution assembly comprising a plurality of processing regions, each processing region separated from adjacent processing regions by a gas curtain, at least one of the processing regions comprises a plasma processing region with a main deposition generator operating at a main deposition generator frequency;
- and
- a low frequency bias generator electrically connected to the susceptor assembly through an interface box to apply a low frequency bias to the susceptor assembly, the interface box comprising a DC blocking capacitor for DC isolation of the susceptor assembly.
1 more element
A processing chamber comprising:
- a susceptor assembly having a top surface and a central axis to rotate a plurality of substrates positioned on the top surface around the central axis of the susceptor assembly;
- a gas distribution assembly comprising a plurality of processing regions, each processing region separated from adjacent processing regions by a gas curtain, at least one of the processing regions comprises a plasma processing region with a main deposition generator operating at a main deposition generator frequency, wherein the plasma processing region comprises a vertical plasma source with an RF hot electrode and a return electrode positioned a distance above the top surface of the susceptor assembly and generates a remote plasma;
- and
- a low frequency bias generator electrically connected to the susceptor assembly to apply a low frequency bias to the susceptor assembly.
1 more element
A processing chamber comprising:
- a susceptor assembly having a top surface and a central axis to rotate a plurality of substrates positioned on the top surface around the central axis of the susceptor assembly;
- a gas distribution assembly comprising a plurality of processing regions, each processing region separated from adjacent processing regions by a gas curtain, at least one of the processing regions comprises a plasma processing region with a main deposition generator operating at a main deposition generator frequency, wherein the at least one of the processing regions generates a direct plasma and the main deposition generator applies power to the gas distribution assembly and the susceptor assembly acts as a return electrode, the main deposition generator applying sufficient energy to ignite a plasma in the plasma processing region and not ignite a plasma in non-plasma processing regions;
- and
- a low frequency bias generator electrically connected to the susceptor assembly to apply a low frequency bias to the susceptor assembly.
1 more element
Dependencies are inferred from the claim text.