Ion impantation gas supply system
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHsing-Piao Hsu, Nai-Han Cheng, Ping-Chih Ou
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Abstract
The present disclosure describes a system and a method for providing a mixed gas to an ion implantation tool. The system includes a water supply, an electrical source, a gas generator. The gas generator is configured to generate a first gas from the water supply and the electrical source. The system also includes a first flow controller configured to control a first flow rate of the first gas, a gas container to provide a second gas, a second flow controller configured to control a second flow rate of the second gas, and a gas pipe configured to mix the first and second gases into a mixed gas. The mixed gas can be delivered to, for example, an ion source head of the ion implantation tool.
Claims18
A gas supply system, comprising:
- a gas generator configured to continuously generate a first gas on demand from a water supply and an electrical source and for a predetermined period of time greater than the first gas provided by a gas container having a predetermined storing capacity;
- a first flow controller connected to the gas generator through at least one valve and configured to control a first flow rate of the first gas;
- a gas container having a predetermined storing capacity of a second gas and configured to provide the second gas;
- a second flow controller configured to control a second flow rate of the second gas;
- and
- a gas pipe configured to mix the first gas and the second gas into a mixed gas.
A method for providing a mixed gas to an implantation tool, comprising:
- receiving a water supply;
- generating continuously, by a gas generator, a first gas on demand using the water supply and an electrical source and for a predetermined period of time greater than the first gas provided by, a gas container having a predetermined storing capacity;
- controlling a first flow rate of the first gas by a first flow controller, wherein the first flow controller is connected to the gas generator through at least one valve;
- providing, from a gas container having a predetermined storing capacity of a second gas, the second gas;
- controlling a second flow rate of the second gas by a second flow controller;
- mixing the first gas and the second gas into the mixed gas;
- and
- delivering the mixed gas through a gas pipe to an ion source head of the implantation tool.
An ion implantation system, comprising:
- an ion source head configured to extract an ion beam;
- and
- a gas supply system configured to provide a mixed gas to the ion source head, comprising:
- a gas generator configured to continuously generate a first gas on demand from a water supply and an electrical source and for a predetermined period of time greater than the first gas provided by a gas container having a predetermined storing capacity;
- a first flow controller connected to the gas generator through at least one valve and configured to control a first flow rate of the first gas;
- a gas container having a predetermined storing capacity of a second gas and configured to provide the second gas;
- a second flow controller configured to control a second flow rate of the second gas;
- and
- a gas pipe configured to:
- mix the first and the second gases into the mixed gas;
- and
- deliver the mixed gas to the ion source head.
Dependencies are inferred from the claim text.