Intelligent proactive responses to operations to read data from memory cells
AssigneeMicron Technology, Inc.
InventorsSivagnanam Parthasarathy, James Fitzpatrick, Patrick Robert Khayat, AbdelHakim S. Alhussien
Life of this patent
Estimating the term…
Abstract
A memory device to generate intelligent, proactive responses to a read command. For example, signal and noise characteristics of a group of memory cells in a memory device are measured to determine a read voltage. An action is identified based on evaluation of the quality of data retrievable using the read voltage from the group of memory cells. While a response indicating the action is provided responsive to the command, the memory device can initiate the action proactively before a subsequent command, following the response, is received.
Claims20
A memory device, comprising:
- an integrated circuit package enclosing the memory device;
- and
- a plurality of groups of memory cells formed on at least one integrated circuit die;
- wherein in response to a command identifying a group of memory cells within the plurality of groups, the memory device is configured to,
- measure signal and noise characteristics of the group of memory cells;
- determine, based on the signal and noise characteristics, a read voltage;
- evaluate quality of data retrievable using the read voltage from the group of memory cells;
- identify an action based on the quality;
- provide, responsive to the command, a response indicating the action;
- and
- initiate the action before a subsequent command following the response is received.
A method, comprising:
- measuring, in response to a command identifying a group of memory cells in a memory device, signal and noise characteristics of the group of memory cells;
- determining, based on the signal and noise characteristics, a read voltage;
- evaluating quality of data retrievable using the read voltage from the group of memory cells;
- identifying an action based on the quality;
- providing, responsive to the command, a response indicating the action;
- and
- initiating the action before a subsequent command following the response is received.
A memory sub-system, comprising:
- a processing device;
- and
- at least one memory device, the memory device having a group of memory cells formed on an integrated circuit die;
- wherein the processing device is configured to transmit, to the memory device, a command with an address identifying the group of memory cells;
- wherein in response to the command, the memory device is configured to:
- determine a read voltage based on signal and noise characteristics of the group of memory cells;
- identify, based on the signal and noise characteristics, an action according to quality of data retrievable using the read voltage from the group of memory cells;
- provide, responsive to the command, a response indicating the action;
- and
- initiate the action before a subsequent command is received after the response.
Dependencies are inferred from the claim text.