Non-volatile memory with countermeasure for over programming

A method of programming non-volatile storage, comprising:

• applying programming to a plurality of memory cells to program the memory cells into a set of data states, each data state comprises a threshold voltage distribution such that data state N has higher threshold voltages than data state N-1 and lower threshold voltages than data state N+1, each data state corresponding to a respective verify target voltage of a set of verify target voltages and a respective read reference voltage of a set of read reference voltages, the set of read reference voltages are different than the set of verify target voltages;
• performing verification of programming of the memory cells by testing whether threshold voltages of memory cells being programmed have reached verify target voltages;
• concurrently while performing verification for data state N by testing whether memory cells being programmed to data state N have reached a verify target voltage for data state N, determining whether memory cells being programmed to data state N-1 are over programmed by testing whether the memory cells being programmed to data state N-1 have reached a read reference voltage for data state N that is different in voltage magnitude than the verify target voltage for data state N;
• and
• in response to determining that more than a threshold number of memory cells being programmed to data state N-1 are over programmed and during the programming of the memory cells into the set of data states, adjusting the programming of the memory cells.

A non-volatile storage apparatus, comprising:

• a plurality of memory cells connected to a common word line and configured to be programmed into a plurality of data states, the plurality of data states include data state N and data state N-1, each data state of the plurality of data states corresponds to a respective verify target voltage of a set of verify target voltages and a respective read reference voltage of a set of read reference voltages, the set of verify target voltages is different than the set of read reference voltages;
• and
• a control circuit connected to the memory cells, the control circuit is configured to program the memory cells and perform verification of programming of the memory cells by testing whether threshold voltages of memory cells being programmed have reached respective verify target voltages, the control circuit is configured to read the memory cells by testing whether threshold voltages of memory cells being read are above respective read reference voltages, the control circuit is configured to determine whether memory cells being programmed to data state N-1 are over programmed while performing verification for data state N by;
• applying a first word line voltage magnitude via the common word line concurrently to the memory cells being programmed to data state N-1 and the memory cells being programmed to data state N;
• and
• in response to applying the first word line voltage magnitude on the common word line, testing whether the memory cells being programmed to data state N-1 have reached a read reference voltage for data state N concurrently with testing whether memory cells being programmed to data state N have reached a verify target voltage for data state N that is higher in magnitude than the read reference voltage for data state N.