Semiconductor memory device
AssigneeKioxia Corporation
InventorsKosuke Yanagidaira, Hiroshi Tsubouchi
Life of this patent
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Abstract
According to one embodiment, a semiconductor memory device includes a controller configured to execute a read operation. In the read operation, the controller is configured to: apply first and second read voltages to a word line, read data at each of first and second times, apply the first voltage to the source line at each of the first and second times, apply a second voltage to the source line during the application of the first read voltage to the word line and before the first time, and apply a third voltage to the source line during the application of the second read voltage to the word line and before the second time.
Claims20
A semiconductor memory device comprising:
- a bit line;
- a source line;
- a memory cell connected between the bit line and the source line;
- a word line connected to a gate of the memory cell;
- and
- a controller configured to execute a read operation,
- wherein in the read operation, the controller is configured to:
- apply a first read voltage and a second read voltage different from the first read voltage to the word line,
- read data at each of a first time and a second time, the first time being a time at which the first read voltage is applied to the word line, and the second time being a time at which the second read voltage is applied to the word line,
- apply a first voltage to the source line at each of the first time and the second time,
- apply a second voltage higher than the first voltage to the source line during the application of the first read voltage to the word line and before the first time, and
- apply a third voltage lower than the first voltage to the source line during the application of the second read voltage to the word line and before the second time.
A semiconductor memory device comprising:
- a bit line;
- a source line;
- a memory cell connected between the bit line and the source line;
- a word line connected to a gate of the memory cell;
- and
- a controller configured to execute a read operation,
- wherein in the read operation, the controller is configured to:
- apply a first read voltage and a second read voltage different from the first read voltage to the word line,
- read data at a first time and a second time, the first time being a time at which the first read voltage is applied to the word line, and the second time being a time at which the second read voltage is applied to the word line,
- apply a first voltage to the source line at each of the first time and the second time,
- apply a second voltage different from the first voltage to the source line during the application of the first read voltage to the word line and before the first time, and
- apply a third voltage different from each of the first and second voltages to the source line during the application of the second read voltage to the word line and before the second time.
Dependencies are inferred from the claim text.