Pre-charge voltage for inhibiting unselected NAND memory cell programming

A method comprising:

• applying a pre-charge voltage to a first end of an unselected NAND string in a memory array having a first vertical sub-block of non-volatile memory cells and a second vertical sub-block of memory cells;
• applying an overdrive voltage to programmed word lines in the first vertical sub-block while applying the pre-charge voltage to the first end of the unselected NAND;
• applying a bypass voltage to unprogrammed word lines in the first vertical sub-block and in the second vertical sub-block while applying the pre-charge voltage to the first end of the unselected NAND;
• inhibiting programming of an unselected memory cell on the unselected NAND string comprising:
• applying a boost voltage to word lines in the first vertical sub-block and word lines in the second vertical sub-block after applying the overdrive voltage to the programmed word lines in the first vertical sub-block and after applying the bypass voltage to the unprogrammed word lines in the first vertical sub-block and in the second vertical sub-block;
• and
• maintaining the boost voltage to the word lines in the first vertical sub-block and the word lines in the second vertical sub-block while applying a program voltage to a selected word line, wherein the unselected memory cell is connected to the selected word line.

A non-volatile storage device comprising:

• a control circuit configured to connect to a plurality of NAND strings of memory cells, each NAND string having a first set of memory cells, a second set of memory cells, and a third set of memory cells, wherein the second set is between the first set and the third set, wherein the control circuit is configured to:
• apply an overdrive voltage to all programmed memory cells in the first set while applying a bypass voltage to unprogrammed memory cells in the second set and while applying a pre-charge voltage to a first end of an unselected NAND string;
• boost a voltage of a channel of an unselected memory cell on the unselected NAND string to an inhibit voltage after applying the overdrive voltage, the bypass voltage and the pre-charge voltage;
• and
• apply a program voltage to the unselected memory cell and to a selected memory cell on a selected NAND string while the channel voltage of the unselected memory cell is boosted to the inhibit voltage.