Memory, information processing system, and method of controlling memory

A memory comprising:

• a memory array that comprises a reference cell and a memory cell;
• and
• an access control unit that is electrically connected to the memory array,
• wherein the reference cell is configured to:
• switch, when a reference access voltage transitions to a level that exceeds a reference threshold voltage of the reference cell, from a non-conduction state to a conduction state,
• wherein the memory cell is configured to:
• switch, when a memory access voltage transitions to a level that exceeds a threshold voltage of the memory cell, from the non-conduction state to the conduction state,
• wherein the access control unit is configured to:
• apply, to the reference cell, the reference access voltage,
• obtain, by measuring the reference access voltage that the access control unit applies to the reference cell, the reference threshold voltage of the reference cell,
• estimate, by processing the reference threshold voltage of the reference cell, the threshold voltage of the memory cell, and
• apply, to the memory cell, the memory access voltage.