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US 11,081,173 B2Granted
Via formation for cross-point memory
AssigneeMicron Technology, Inc.
InventorStephen Tang
Life of this patent
Estimating the term…
Abstract
Embodiments disclosed herein may relate to electrically conductive vias in cross-point memory array devices. In an embodiment, the vias may be formed using a lithographic operation also utilized to form electrically conductive lines in a first electrode layer of the cross-point memory array device.
Claims18
A method comprising:
- forming a stack of materials that comprises a first electrode material and a second material;
- patterning the stack of materials to form a plurality of placeholders that comprise the first electrode material and the second material, wherein the second material comprises a memory material configurable to store information;
- and
- replacing at least a portion of each placeholder of the plurality with a third material to form a plurality of vias that comprise the third material, wherein a dimension of a via of the plurality is based at least in part on a dimension of a respective placeholder of the plurality.
1 more element
A method, comprising:
- forming, based at least in part on a first patterning operation, a plurality of lines and a plurality of placeholders for vias, wherein the plurality of lines comprise a first electrode material and a second material, and wherein the plurality of placeholders comprise the second material, wherein the second material comprises a memory material configurable to store information;
- and
- forming a plurality of vias defined at least in part by the plurality of placeholders.
A method, comprising:
- forming a plurality of line segments that comprise a placeholder material, wherein the placeholder material comprises a memory material configurable to store information;
- surrounding the plurality of line segments with an encapsulating material;
- removing the placeholder material from the plurality of line segments to form a plurality of holes in the encapsulating material;
- depositing a via material in the plurality of holes to form a plurality of vias in contact with a first conductive material;
- and
- depositing a second conductive material over the encapsulating material and the plurality of vias, wherein the second conductive material is in contact with the plurality of vias.
3 more elements
Dependencies are inferred from the claim text.