Nonvolatile memory device including a fast read page and a storage device including the same
AssigneeSamsung Electronics Co., Ltd.
InventorsYunjung Lee, Chanha Kim, Kangho Roh, Heewon Lee
Life of this patent
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Abstract
A nonvolatile memory device including: a memory cell array, the memory cell array including a plurality of cell strings, at least one of the cell strings including a plurality of memory cells stacked in a direction perpendicular to a surface of a substrate, at least one of the memory cells is a multi-level cell storing at least three bits; and a control logic circuit configured to control a page buffer to read a fast read page of the memory cells with one read voltage and at least two normal read pages of the memory cells with the same number of read voltages.
Claims25
A nonvolatile memory device, comprising
- a memory cell array, the memory cell array including a plurality of cell strings, at least one of the cell strings including a plurality of memory cells stacked in a direction perpendicular to a surface of a substrate, at least one of the memory cells is a multi-level cell storing at least three bits;
- and
- a control logic circuit configured to control a page buffer to read a fast read page of the memory cells with one read voltage and at least two normal read pages of the memory cells with the same number of read voltages.
A storage system, comprising:
- a storage device that exchanges a signal with an external device, wherein the storage device includes a memory controller and a plurality of nonvolatile memories, wherein at least one of the memories includes:
- a memory cell array, the memory cell array including a plurality of memory cells stacked in a direction perpendicular to a surface of a substrate;
- and
- a control logic circuit configured to control a page buffer to read a fast read page of the memory cells with one read voltage and at least two normal read pages of the memory cells with the same number of read voltages.
A memory device, comprising:
- a memory controller;
- and
- a nonvolatile memory device connected to the memory controller, wherein the memory controller is configured to perform a read operation on the nonvolatile memory device such that a fast read page of the nonvolatile memory device is read with one read voltage and at least two normal read pages of the nonvolatile memory device are read with the same number of read voltages.
Dependencies are inferred from the claim text.