Mixed digital-analog memory devices and circuits for secure storage and computing
AssigneeHefei Reliance Memory Limited
InventorsLiang Zhao, Zhichao Lu
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AssigneeHefei Reliance Memory Limited
InventorsLiang Zhao, Zhichao Lu
Estimating the term…
A non-volatile memory device includes a plurality of memory cells arranged in a matrix, a plurality of word lines extended in a row direction, and a plurality of bit lines extended in a column direction. Each of the memory cells is coupled to one of the word lines and one of the bit lines. The memory device further includes a word-line control circuit coupled to and configured to control the word lines, a first bit-line control circuit configured to control the bit lines and sense the memory cells in a digital mode, and a second bit-line control circuit configured to bias the bit lines and sense the memory cells in an analog mode. The first bit-line control circuit is coupled to a first end of each of the bit lines. The second bit-line control circuit is coupled to a second end of each of the bit lines.
A non-volatile memory device comprising:
A method for operating a mixed digital-analog memory device, wherein the mixed digital-analog memory device includes:
A method for storing a data comprising:
Dependencies are inferred from the claim text.