Pseudo-cryogenic semiconductor device having pseudo-cryogenic temperature sensor and voltage supplier and pseudo-cryogenic semiconductor stack

A pseudo-cryogenic semiconductor device comprising:

• a memory block having first to fourth memory banks;
• and
• a logic block including first to fourth voltage supply circuits coupled with the first to fourth memory banks respectively to independently supply voltages to the first to fourth memory banks,
• wherein each of the first to fourth voltage supply circuits comprises:
• a temperature sensing circuit configured to generate voltage adjustment signals by sensing a temperature in a range from about 70° K to about 173° K;
• a first bias voltage supply circuit configured to receive the voltage adjustment signals and supply a first bias voltage to a bulk region of the coupled memory banks;
• and
• a first reference voltage supply circuit configured to receive the voltage adjustment signals and supply a first reference voltage to the coupled memory banks,
• wherein the first reference voltage supply circuit comprises:
• a first reference voltage generator configured to generate a first initial reference voltage having a positive (+) value;
• a first reference voltage splitter configured to receive the first initial reference voltage and generate a plurality of first intermediate reference voltages having a positive (+) value;
• and
• a first reference voltage selector configured to select one of the first intermediate reference voltages and outputs the selected voltage as the first reference voltage.

A semiconductor stack comprising:

• a main board;
• a plurality of semiconductor devices mounted on the main board;
• and
• a cooling system configured to cool the plurality of semiconductor devices to a temperature in a range from about 70° K to about 173° K,
• wherein each of the semiconductor devices includes voltage supply circuits that operate independently, and
• wherein each of the voltage supply circuits includes:
• a temperature sensing circuit configured to generate voltage adjustment signals according to the temperature to which plurality of semiconductor devices are cooled;
• voltage selectors configured to adjust output voltages according to the voltage adjustment signals;
• and
• a pre-switching circuit including an on-off switch configured to substantially prevent an initial bulk bias voltage from being provided to the voltage selectors.

A voltage supplying circuit for a pseudo-cryogenic semiconductor device comprising:

• a temperature sensing circuit suitable for sensing a temperature of the semiconductor device and generating a voltage adjustment signal based on the sensed temperature;
• a bias voltage generator suitable for receiving an input bias voltage and adjusting the input bias voltage to generate an intermediate bias voltage;
• a bias voltage selector suitable for selectively selecting one of the intermediate bias voltage and a ground voltage according to the voltage adjustment signal, and outputting the selected voltage as an output bias voltage, and
• a pre-switching circuit including an on-off switch configured to substantially prevent an initial bulk bias voltage from being provided to the bias voltage selector.