Methods and apparatus to perform error detection and/or correction in a memory device

An apparatus to monitor memory, the apparatus comprising:

• an error manager to:
• compare a first memory location of a first error in the memory to a plurality of memory locations in an error history log, the plurality of memory locations previously identified in the error history log based on errors detected in the memory locations, ones of the memory locations associated with corresponding counters that track the errors detected in the memory locations;
• and
• update a first one of the counters corresponding to the first memory location in response to a first address of the first memory location matching a second address of one of the memory locations in the error history log;
• and
• a command generator to, in response to the first one of the counters satisfying a threshold, transmit a command to an error corrector to perform error correction on the first memory location, the error corrector to perform the error correction by using an adaptive double device data correction process.

An apparatus to monitor memory, the apparatus comprising:

• an error manager to:
• compare a first memory location of a first error in the memory to a plurality of memory locations in an error history log, the plurality of memory locations previously identified in the error history log based on errors detected in the memory locations, ones of the memory locations associated with corresponding counters that track the errors detected in the memory locations;
• and
• update a first one of the counters corresponding to the first memory location in response to a first address of the first memory location matching a second address of one of the memory locations in the error history log;
• a command generator to, in response to the first one of the counters satisfying a threshold, transmit a command to an error corrector to perform error correction on the first memory location;
• and
• an adaptive threshold manager to:
• generate the threshold, the threshold is a first adaptive-time window threshold, the first adaptive-time window threshold variable over time based on changes in at least one of a utilization, a temperature, or an elevation of the memory;
• and
• determine whether the first error is a random error or a persistent error based on whether the first one of the counters satisfies the first adaptive-time window threshold.

An apparatus to monitor memory, the apparatus comprising:

• means for comparing to:
• compare a first memory location of a first error in the memory to a plurality of memory locations in an error history log, the plurality of memory locations previously identified in the error history log based on errors detected in the memory locations, ones of the memory locations associated with corresponding counters that track the errors detected in the memory locations;
• and
• update a first one of the counters corresponding to the first memory location in response to a first address of the first memory location matching a second address of one of the memory locations in the error history log;
• means for monitoring a change in a voltage level of a status pin based on a detection of the first memory location, the first memory location including a memory cell;
• means for obtaining the first address of the first memory location after the voltage level of the status pin changes;
• and
• means for transmitting a command to a means for performing error correction on the first memory location, the transmitting of the command in response to the first one of the counters satisfying a threshold.

An apparatus to monitor memory, the apparatus comprising:

• means for comparing to:
• compare a first memory location of a first error in the memory to a plurality of memory locations in an error history log, the plurality of memory locations previously identified in the error history log based on errors detected in the memory locations, ones of the memory locations associated with corresponding counters that track the errors detected in the memory locations;
• and
• update a first one of the counters corresponding to the first memory location in response to a first address of the first memory location matching a second address of one of the memory locations in the error history log;
• and
• means for transmitting a command to a means for performing error correction on the first memory location, the transmitting of the command in response to the first one of the counters satisfying a threshold, the means for performing error correction is to perform the error correction by using an adaptive double device data correction process.

An apparatus to monitor memory, the apparatus comprising:

• means for comparing to:
• compare a first memory location of a first error in the memory to a plurality of memory locations in an error history log, the plurality of memory locations previously identified in the error history log based on errors detected in the memory locations, ones of the memory locations associated with corresponding counters that track the errors detected in the memory locations;
• and
• update a first one of the counters corresponding to the first memory location in response to a first address of the first memory location matching a second address of one of the memory locations in the error history log;
• means for transmitting a command to a means for performing error correction on the first memory location, the transmitting of the command in response to the first one of the counters satisfying a threshold;
• and
• means for generating to:
• generate the threshold, the threshold is a first adaptive-time window threshold, the first adaptive-time window threshold variable over time based on changes in at least one of a utilization, a temperature, or an elevation of the memory;
• and
• determine whether the first error is a random error or a persistent error based on whether the first one of the counters satisfies the first adaptive-time window threshold.

A method to monitor memory, the method comprising:

• comparing, with a processor, a first memory location of a first error in the memory to a plurality of memory locations in an error history log, the plurality of memory locations previously identified in the error history log based on errors detected in the memory locations, ones of the memory locations associated with corresponding counters that track the errors detected in the memory locations;
• updating, with the processor, a first one of the counters corresponding to the first memory location in response to a first address of the first memory location matching a second address of one of the memory locations in the error history log;
• monitoring, with the processor, a change in a voltage level of a status pin, the change based on detecting the first memory location, the first memory location including a memory cell;
• in response to the change in the voltage level of the status pin, obtaining, with the processor, the first address of the first memory location;
• and
• transmitting, with the processor, a command to perform error correction on the first memory location, the transmitting in response to the first one of the counters satisfying a threshold.

A method to monitor memory, the method comprising:

• comparing, by executing an instruction with a processor, a first memory location of a first error in the memory to a plurality of memory locations in an error history log, the plurality of memory locations previously identified in the error history log based on errors detected in the memory locations, ones of the memory locations associated with corresponding counters that track the errors detected in the memory locations;
• updating, by executing an instruction with the processor, a first one of the counters corresponding to the first memory location in response to a first address of the first memory location matching a second address of one of the memory locations in the error history log;
• transmitting, by executing an instruction with the processor, a command to perform error correction on the first memory location, the transmitting in response to the first one of the counters satisfying a threshold;
• generating the threshold, the threshold is a first adaptive-time window threshold, the first adaptive-time window threshold variable over time based on changes in at least one of a utilization, a temperature, or an elevation of the memory;
• and
• determining whether the first error is a random error or a persistent error based on whether the first one of the counters satisfies the first adaptive-time window threshold.

A non-transitory computer readable storage medium comprising instructions that, when executed, cause a machine to at least:

• compare a first memory location of a first error in memory to a plurality of memory locations in an error history log, the plurality of memory locations previously identified in the error history log based on errors detected in the memory locations, ones of the memory locations associated with corresponding counters that track the errors detected in the memory locations;
• update a first one of the counters corresponding to the first memory location in response to a first address of the first memory location matching a second address of one of the memory locations in the error history log;
• monitor a change in a voltage level of a status pin, the change based on a detection of the first memory location, the first memory location including a memory cell;
• in response to the change in the voltage level of the status pin, obtain the first address of the first memory location;
• and
• transmit, in response to the first one of the counters satisfying a threshold, a command to perform error correction on the first memory location.

A non-transitory computer readable storage medium comprising instructions that, when executed, cause a machine to at least:

• compare a first memory location of a first error in memory to a plurality of memory locations in an error history log, the plurality of memory locations previously identified in the error history log based on errors detected in the memory locations, ones of the memory locations associated with corresponding counters that track the errors detected in the memory locations;
• update a first one of the counters corresponding to the first memory location in response to a first address of the first memory location matching a second address of one of the memory locations in the error history log;
• and
• transmit, in response to the first one of the counters satisfying a threshold, a command to perform error correction on the first memory location, the error correction to be performed by using an adaptive double device data correction process.

A non-transitory computer readable storage medium comprising instructions that, when executed, cause a machine to at least:

• compare a first memory location of a first error in memory to a plurality of memory locations in an error history log, the plurality of memory locations previously identified in the error history log based on errors detected in the memory locations, ones of the memory locations associated with corresponding counters that track the errors detected in the memory locations;
• update a first one of the counters corresponding to the first memory location in response to a first address of the first memory location matching a second address of one of the memory locations in the error history log;
• transmit, in response to the first one of the counters satisfying a threshold, a command to perform error correction on the first memory location;
• generate the threshold, the threshold is a first adaptive-time window threshold, the first adaptive-time window threshold variable over time based on changes in at least one of a utilization, a temperature, or an elevation of the memory;
• and
• determine whether the first error is a random error or a persistent error based on whether the first one of the counters satisfies the first adaptive-time window threshold.

A method to monitor memory, the method comprising:

• comparing a first memory location of a first error in the memory to a plurality of memory locations in an error history log, the plurality of memory locations previously identified in the error history log based on errors detected in the memory locations, ones of the memory locations associated with corresponding counters that track the errors detected in the memory locations;
• updating a first one of the counters corresponding to the first memory location in response to a first address of the first memory location matching a second address of one of the memory locations in the error history log;
• and
• transmitting a command to perform error correction on the first memory location, the transmitting in response to the first one of the counters satisfying a threshold, the error correction to be performed using an adaptive double device data correction process.