# US 11,079,681 B2 · Lithography method for positive tone development > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,079,681 B2 - Document ID: US11079681B2 - Status: Granted - Kind: B2 - Application number: 16/248,601 - Filed: 2019-01-15 - Published: 2020-05-21 - Granted: 2021-08-03 - Earliest claimed: 2018-11-21 - Assignees: Taiwan Semiconductor Manufacturing Company, Ltd. - Applicants: Taiwan Semiconductor Manufacturing Co., Ltd. - Inventors: Ming-Hui Weng; Chen-Yu Liu; Cheng-Han Wu; Ching-Yu Chang; Chin-Hsiang Lin - Web page: https://patentgrep.com/patent/US11079681B2 ## CPC - G03F 7/40: Treatment after imagewise removal, e.g. baking - G03F 1/82: Auxiliary processes, e.g. cleaning or inspecting - G03F 7/30: Imagewise removal using liquid means - G03F 7/322: {Aqueous alkaline compositions} - G03F 7/38: Treatment before imagewise removal, e.g. prebaking {(G03F7/265 takes precedence)} - G03F 7/70925: {Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning} - G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G) ## Abstract A lithography method includes forming a resist layer over a substrate. The resist layer is exposed to radiation. The exposed resist layer is developed using a developer that removes an exposed portion of the exposed resist layer, thereby forming a patterned resist layer. The patterned resist layer is rinsed using a basic aqueous rinse solution. ## Claims ### Claim 1 A lithography method comprising: forming a resist layer over a substrate; exposing the resist layer to radiation; developing the exposed resist layer using a developer, thereby forming a patterned resist layer; providing a basic aqueous solution to the exposed resist layer during developing the exposed resist layer, wherein the developer is a first aqueous solution of a first base, the basic aqueous solution is a second aqueous solution of a second base, and the first base is different from the second base; and rinsing the patterned resist layer using a basic aqueous rinse solution. ### Claim 2 (depends on 1) The lithography method of claim 1, wherein a pH value of the basic aqueous rinse solution is lower than a pH value of the developer. ### Claim 3 (depends on 2) The lithography method of claim 2, wherein the pH value of the basic aqueous rinse solution is in a range of about 8 to about 12. ### Claim 4 (depends on 1) The lithography method of claim 1, wherein the basic aqueous rinse solution comprises a third base comprising ammonia, methylamine, dimethylamine, trimethylamine, pyridine, imidazole pyrrole, 4-methylimidazole, pyrazole, pyrazoline, pyrazolidine, methylethylamine, oxazole, thiazole, or combinations thereof. ### Claim 5 (depends on 1) The lithography method of claim 1, wherein the second base comprises ammonia, methylamine, dimethylamine, trimethylamine, pyridine, imidazole pyrrole, 4-methylimidazole, pyrazole, pyrazoline, pyrazolidine, methylethylamine, oxazole, thiazole, or combinations thereof. ### Claim 6 (depends on 1) The lithography method of claim 1, wherein a pH value of the basic aqueous solution is lower than a pH value of the developer. ### Claim 7 (depends on 1) The lithography method of claim 1, further comprising wetting the exposed resist layer using a basic aqueous wetting solution before developing the exposed resist layer. ### Claim 8 (depends on 7) The lithography method of claim 7, wherein the basic aqueous wetting solution and the basic aqueous rinse solution comprises the same base. ### Claim 9 (depends on 1) The lithography method of claim 1, wherein a rinse time of rinsing the patterned resist layer is less than about 3 minutes. ### Claim 10 (depends on 1) The lithography method of claim 1, wherein a rinse temperature of rinsing the patterned resist layer is in a range of about 20° C. to about 40° C. ### Claim 11 A lithography method comprising: forming a resist layer over a substrate; exposing the resist layer to radiation; wetting the exposed resist layer using a basic aqueous solution; and after wetting the exposed resist layer using the basic aqueous solution, developing the exposed resist layer using a developer that removes an exposed portion of the exposed resist layer, thereby forming a patterned resist layer. ### Claim 12 (depends on 11) The lithography method of claim 11, wherein a pH value of the basic aqueous solution is lower than a pH value of the developer. ### Claim 13 (depends on 11) The lithography method of claim 11, wherein the basic aqueous solution comprises a base comprising ammonia, methylamine, dimethylamine, trimethylamine, pyridine, imidazole, pyrrole, 4-methylimidazole, pyrazole, pyrazoline, pyrazolidine, methylethylamine, oxazole, thiazole, or combinations thereof. ### Claim 14 (depends on 11) The lithography method of claim 11, wherein the basic aqueous solution is free of tetramethylammonium hydroxide (TMAH). ### Claim 15 A lithography method comprising: forming a resist layer over a substrate; exposing the resist layer to radiation; developing the resist layer in a positive tone developer, thereby forming a patterned resist layer; and providing a basic aqueous solution to the resist layer during developing the resist layer, wherein a pH value of the basic aqueous solution is lower than a pH value of the positive tone developer, and a base concentration of the basic aqueous solution is lower than a base concentration of the positive tone developer. ### Claim 16 (depends on 15) The lithography method of claim 15, wherein the basic aqueous solution is free of tetramethylammonium hydroxide (TMAH). ### Claim 17 (depends on 15) The lithography method of claim 15, wherein the basic aqueous solution comprises a base comprising ammonia, methylamine, dimethylamine, trimethylamine, pyridine, imidazole, pyrrole, 4-methylimidazole, pyrazole, pyrazoline, pyrazolidine, methylethylamine, oxazole, thiazole, or combinations thereof. ### Claim 18 (depends on 15) The lithography method of claim 15, wherein the base concentration of the basic aqueous solution is in a range of about 0.2 ppm to about 300 ppm. ### Claim 19 (depends on 11) The lithography method of claim 11, wherein the developer is a first aqueous solution of a first base, the basic aqueous solution is a second aqueous solution of a second base, and the first base is different from the second base. ### Claim 20 (depends on 15) The lithography method of claim 15, wherein the positive tone developer is a first aqueous solution of a first base, the basic aqueous solution is a second aqueous solution of a second base, and the first base is different from the second base.