# US 11,079,643 B2 · Active matrix substrate and liquid crystal display device with touch sensor > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,079,643 B2 - Document ID: US11079643B2 - Status: Granted - Kind: B2 - Application number: 16/891,257 - Filed: 2020-06-03 - Published: 2020-12-10 - Granted: 2021-08-03 - Earliest claimed: 2019-06-07 - Assignees: Sharp Kabushiki Kaisha - Applicants: Sharp Kabushiki Kaisha - Inventors: Masaki Maeda; Tohru Daitoh; Hajime Imai; Yoshihito Hara; Hideki Kitagawa; Tatsuya Kawasaki; Teruyuki Ueda; Yoshiharu Hirata - Web page: https://patentgrep.com/patent/US11079643B2 ## CPC - G02F 1/1368: in which the switching element is a three-electrode device {(G02F1/136277 takes precedence)} - G02F 1/13338: {Input devices, e.g. touch panels} - G02F 1/134318: {having a patterned common electrode} - G02F 1/134363: {for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]} - G02F 1/136209: {Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element} - G02F 1/136286: {Wiring, e.g. gate line, drain line} - G06F 3/0412: {Digitisers structurally integrated in a display} - G06F 3/0448: {Details of the electrode shape, e.g. for enhancing the detection of touches, for generating specific electric field shapes, for enhancing display quality} - H10D 86/423: {comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO} - H10D 86/441: {Interconnections, e.g. scanning lines} - H10D 86/451: {characterised by the compositions or shapes of the interlayer dielectrics} - H10D 86/60: wherein the TFTs are in active matrices - G02F 1/136227: {Through-hole connection of the pixel electrode to the active element through an insulation layer} - G02F 2201/121: common or background - G02F 2201/123: pixel - G06F 3/0443: {using a single layer of sensing electrodes} - G02F: OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS - G06F: ELECTRIC DIGITAL DATA PROCESSING (computer systems based on specific computational models G06N) - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract An active matrix substrate includes: a source metal layer including a plurality of source bus lines; a lower insulating layer covering the source metal layer; a oxide semiconductor TFT including an oxide semiconductor layer provided on the lower insulating layer; an inter-layer insulating layer covering the oxide semiconductor TFT; a pixel electrode provided on the inter-layer insulating layer; a common electrode including a plurality of sub common electrodes each of which is capable of functioning as a touch sensor electrode; a gate metal layer including a plurality of gate bus lines and a gate electrode; a drain metal layer including the drain electrode; and a plurality of touch sensor lines included in the drain metal layer and each electrically connected to any one of the sub common electrodes. ## Claims ### Claim 1 An active matrix substrate including a plurality of pixel regions, the active matrix substrate comprising: a substrate; a source metal layer provided on the substrate and including a plurality of source bus lines; a lower insulating layer covering the source metal layer; an oxide semiconductor TFT provided to each of the pixel regions, and including: an oxide semiconductor layer provided on the lower insulating layer; a gate insulating layer provided on the oxide semiconductor layer; a gate electrode provided across the gate insulating layer from the oxide semiconductor layer; and a source electrode and a drain electrode electrically connected to the oxide semiconductor layer, an inter-layer insulating layer covering the oxide semiconductor TFT; a pixel electrode provided on the inter-layer insulating layer and electrically connected to the drain electrode in each of the pixel regions; a common electrode provided across a dielectric layer from the pixel electrode, and including a plurality of sub common electrodes each of which is capable of functioning as a touch sensor electrode; a gate metal layer including a plurality of gate bus lines and the gate electrode; a drain metal layer including the drain electrode in each of the pixel regions; and a plurality of touch sensor lines included in the drain metal layer and each electrically connected to a corresponding one of the sub common electrodes, wherein the dielectric layer is provided on the pixel electrode, and the common electrode is provided on the dielectric layer. ### Claim 2 (depends on 1) The active matrix substrate according to claim 1, wherein each of the touch sensor lines is connected to a corresponding one of the sub common electrodes through a contact hole formed in the dielectric layer and the inter-layer insulating layer. ### Claim 3 (depends on 1) The active matrix substrate according to claim 1 further comprising an upper insulating layer covering the oxide semiconductor layer and the gate metal layer, wherein the touch sensor lines are provided on the upper insulating layer. ### Claim 4 (depends on 1) The active matrix substrate according to claim 1, wherein each of the touch sensor lines overlaps with a corresponding one of the source bus lines when observed in a normal direction of the substrate. ### Claim 5 (depends on 1) The active matrix substrate according to claim 1, wherein the source electrode included in the oxide semiconductor TFT in each of the pixel regions is integrally formed with a corresponding one of the source bus lines. ### Claim 6 (depends on 1) The active matrix substrate according to claim 1, wherein the source metal layer includes a light-blocking layer overlapping with a channel region of the oxide semiconductor layer when observed in a normal direction of the substrate. ### Claim 7 (depends on 1) The active matrix substrate according to claim 1, wherein the oxide semiconductor layer includes an In—Ga—Zn—O-based semiconductor. ### Claim 8 (depends on 7) The active matrix substrate according to claim 7, wherein the In—Ga—Zn—O-based semiconductor includes a crystalline substance. ### Claim 9 (depends on 1) A liquid crystal display device with a touch sensor, the liquid crystal display device comprising: the active matrix substrate according to claim 1; a counter substrate facing the active matrix substrate; and a liquid crystal layer provided between the active matrix substrate and the counter substrate. ### Claim 10 An active matrix substrate including a plurality of pixel regions, the active matrix substrate comprising: a substrate; a source metal layer provided on the substrate and including a plurality of source bus lines; a lower insulating layer covering the source metal layer; an oxide semiconductor TFT provided to each of the pixel regions, and including: an oxide semiconductor layer provided on the lower insulating layer; a gate insulating layer provided on the oxide semiconductor layer; a gate electrode provided across the gate insulating layer from the oxide semiconductor layer; and a source electrode and a drain electrode electrically connected to the oxide semiconductor layer, an inter-layer insulating layer covering the oxide semiconductor TFT; a pixel electrode provided on the inter-layer insulating layer and electrically connected to the drain electrode in each of the pixel regions; a common electrode provided across a dielectric layer from the pixel electrode, and including a plurality of sub common electrodes each of which is capable of functioning as a touch sensor electrode; a gate metal layer including a plurality of gate bus lines and the gate electrode; a drain metal layer including the drain electrode in each of the pixel regions; and a plurality of touch sensor lines included in the drain metal layer and each electrically connected to a corresponding one of the sub common electrodes, wherein the source metal layer includes a light-blocking layer overlapping with a channel region of the oxide semiconductor layer when observed in a normal direction of the substrate. ### Claim 11 (depends on 10) The active matrix substrate according to claim 10, wherein the dielectric layer is provided on the pixel electrode, and the common electrode is provided on the dielectric layer. ### Claim 12 (depends on 10) The active matrix substrate according to claim 10, wherein each of the touch sensor lines is connected to a corresponding one of the sub common electrodes through a contact hole formed in the dielectric layer and the inter-layer insulating layer. ### Claim 13 (depends on 10) The active matrix substrate according to claim 10, further comprising an upper insulating layer covering the oxide semiconductor layer and the gate metal layer, wherein the touch sensor lines are provided on the upper insulating layer. ### Claim 14 (depends on 10) The active matrix substrate according to claim 10, wherein each of the touch sensor lines overlaps with a corresponding one of the source bus lines when observed in a normal direction of the substrate. ### Claim 15 (depends on 10) The active matrix substrate according to claim 10, wherein the source electrode included in the oxide semiconductor TFT in each of the pixel regions is integrally formed with a corresponding one of the source bus lines. ### Claim 16 (depends on 10) The active matrix substrate according to claim 10, wherein the oxide semiconductor layer includes an In—Ga—Zn—O-based semiconductor. ### Claim 17 (depends on 16) The active matrix substrate according to claim 16, wherein the In—Ga—Zn—O-based semiconductor includes a crystalline substance. ### Claim 18 (depends on 10) A liquid crystal display device with a touch sensor, the liquid crystal display device comprising: the active matrix substrate according to claim 10; a counter substrate facing the active matrix substrate; and a liquid crystal layer provided between the active matrix substrate and the counter substrate.