# US 11,079,539 B2 · Semiconductor device and manufacturing method of the same

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- Number: US 11,079,539 B2
- Document ID: US11079539B2
- Status: Granted
- Kind: B2
- Application number: 16/370,409
- Filed: 2019-03-29
- Published: 2019-10-17
- Granted: 2021-08-03
- Earliest claimed: 2018-04-16
- Assignees: Renesas Electronics Corporation
- Applicants: Renesas Electronics Corporation
- Inventors: Tetsuya Iida; Yasutaka Nakashiba
- Web page: https://patentgrep.com/patent/US11079539B2

## CPC

- G02B 6/12004: {Combinations of two or more optical elements}
- H01S 5/02326: Arrangements for relative positioning of laser diodes and optical components, e.g. grooves in the mount to fix optical fibres or lenses
- H01S 5/02345: Wire-bonding
- H01S 5/02375: Positioning of the laser chips
- H01S 5/04254: {characterised by the shape}
- H10F 55/00: Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
- H10F 77/413: {directly associated or integrated with the devices, e.g. back reflectors (directly associated or integrated with photovoltaic cells H10F77/42)}
- H10F 77/933: {for devices having potential barriers}
- G02B 2006/12061: {Silicon}
- G02B 2006/12121: {Laser}
- G02B 2006/12123: {Diode}
- H01S 5/021: {Silicon based substrates}
- H01S 5/026: Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers (stabilisation of output H01S5/06)
- H01S 5/0287: {Facet reflectivity}
- H01S 5/4031: {Edge-emitting structures}
- H01S 2301/176: Specific passivation layers on surfaces other than the emission facet
- G02B: OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- H01S: DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION

## Abstract

According to the present invention, a first semiconductor chip includes a semiconductor substrate, an optical waveguide formed on an upper surface of the semiconductor substrate, and a concave portion formed in the semiconductor substrate in a region that differs from a region in which the optical waveguide is formed. A second semiconductor chip includes a compound semiconductor substrate, and a light emitting unit formed on an upper surface of the compound semiconductor substrate and emitting a laser beam. The second semiconductor chip is mounted in the concave portion of the first semiconductor chip, and a pedestal which is an insulating film is formed between a bottom surface of the concave portion and a back surface of the compound semiconductor substrate.

## Claims

### Claim 1

A semiconductor device comprising:
a first semiconductor chip that includes:
a first substrate;
an insulating layer formed on an upper surface of the first substrate;
an optical waveguide formed on the insulating layer;
an interlayer insulating film formed over the insulating layer so as to cover the optical waveguide; and
a concave portion formed in a region of the first substrate different from a region in which the optical waveguide is formed,
wherein the concave portion penetrates into the first substrate through the interlayer insulating film and the insulating layer; and
a second semiconductor chip that includes a second substrate, and a light emitting unit formed on an upper surface of the second substrate and emitting a light toward the optical waveguide,
wherein the second semiconductor chip is mounted in the concave portion, and
wherein a pedestal which is an insulating film is formed between a bottom surface of the concave portion and a back surface of the second substrate, the back surface being a surface opposite to the upper surface of the second substrate.

### Claim 2 (depends on 1)

The semiconductor device according to claim 1,
wherein the optical waveguide extends in a first direction in plan view and includes a first end surface in the first direction,
the light emitting unit extends in the first direction in plan view and includes a second end surface in the first direction, and
the second end surface of the light emitting unit faces the first end surface of the optical waveguide.

### Claim 3 (depends on 1)

The semiconductor device according to claim 1,
wherein a first electrode is formed on the bottom surface of the concave portion,
a second electrode is formed on the back surface of the second substrate,
the first electrode is electrically connected to the second electrode via a bump electrode, and
the bump electrode is formed at a position not overlapping the pedestal in plan view.

### Claim 4 (depends on 3)

The semiconductor device according to claim 3, wherein the pedestal is adhered to the second electrode.

### Claim 5 (depends on 1)

The semiconductor device according to claim 1, wherein three or more pedestals are formed.

### Claim 6 (depends on 5)

The semiconductor device according to claim 5, wherein, when three or more virtual lines connecting each center of the three or more pedestals to one another in plan view are drawn, a polygonal shape is formed by the three or more virtual lines.

### Claim 7 (depends on 6)

The semiconductor device according to claim 6,
wherein the second semiconductor chip includes a first side and a second side opposite to each other in a first direction in plan view, and a third side and a fourth side opposite to each other in a second direction orthogonal to the first direction in plan view, and
wherein one or more pedestals are arranged at positions closer to the first side than to a first center line connecting a center point of the third side and a center point of the fourth side to each other in plan view, and one or more pedestals are arranged at positions closer to the second side than to the first center line in plan view.

### Claim 8 (depends on 7)

The semiconductor device according to claim 7, wherein one or more pedestals are arranged at positions closer to the third side than to a second center line connecting a center point of the first side and a center point of the second side to each other in plan view, and one or more pedestals are arranged at positions closer to the fourth side than to the second center line in plan view.

### Claim 9 (depends on 7)

The semiconductor device according to claim 7, wherein, when the number of pedestals arranged at positions closer to the first side than to the first center line in plan view and the number of pedestals arranged at positions closer to the second side than to the first center line in plan view differ from each other, a planar area of the pedestal among the fewer number of pedestals is greater than a planar area of the pedestal among the larger number of pedestals.

### Claim 10 (depends on 5)

The semiconductor device according to claim 5, wherein a planar shape of each of the three or more pedestals is a circle or an ellipse.

### Claim 11 (depends on 5)

The semiconductor device according to claim 5, wherein a planar shape of each of the three or more pedestals is a regular hexagon.