# US 11,079,282 B2 · Flexible interconnect sensing devices and related methods

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- Number: US 11,079,282 B2
- Document ID: US11079282B2
- Status: Granted
- Kind: B2
- Application number: 16/202,953
- Filed: 2018-11-28
- Published: 2020-05-28
- Granted: 2021-08-03
- Earliest claimed: 2018-11-28
- Assignees: Semiconductor Components Industries, LLC
- Applicants: Semiconductor Components Industries, LLC
- Inventors: Irfan Rahim; Oswald L. Skeete; Ross F. Jatou
- Web page: https://patentgrep.com/patent/US11079282B2

## CPC

- G01J 5/20: using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
- H10F 39/026: {Wafer-level processing}
- H10F 39/014: {of CMOS image sensors}
- H10F 39/18: Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10F 39/1895: {of the hybrid type}
- H10F 39/809: {of hybrid image sensors}
- H10F 39/811: {Interconnections}
- G01J: MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY (light sources F21, H01J, H01K, H05B; investigating properties of materials by optical means G01N)
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION

## Abstract

Implementations of sensing devices may include a plurality of electromagnetic radiation sensing sections coupled to a flexible interconnect and one or more digital sections coupled to the flexible interconnect. The plurality of electromagnetic radiation sensing sections may be self-aligned through the flexible interconnect.

## Claims

### Claim 1

A method of forming an electromagnetic radiation (EMR) sensing device comprising:
forming a plurality of EMR sensing die in a first side of substrate;
forming a trench partially through the substrate from the first side of the substrate through removing a portion of the substrate between two EMR sensing die of the plurality of EMR sensing die;
coupling a support layer to the first side of the substrate;
singulating the plurality of EMR sensing die through thinning a second side of the substrate opposite the first side of the substrate;
coupling the second side of the substrate to a flexible interconnect;
removing at least a portion of the support layer to fully singulate the plurality of EMR sensing die; and
bending the flexible interconnect at portions of the flexible interconnect corresponding with a location of the trench.

### Claim 2 (depends on 1)

The method of claim 1, wherein the substrate comprises an EMR sensing layer hybrid bonded to an analog layer, wherein the first side of the substrate comprises a side of the EMR sensing layer and the second side of the substrate comprises a side of the analog layer.

### Claim 3 (depends on 2)

The method of claim 2, further comprising forming a through-silicon-via at least partially through the analog layer and exposing the through-silicon-via when thinning the second side of the substrate.

### Claim 4 (depends on 1)

The method of claim 1, further comprising forming the trench through patterning a photoresist layer over the first side of the substrate and etching into the first side of the substrate.

### Claim 5 (depends on 1)

The method of claim 1, wherein the plurality of EMR sensing die each comprise a non-rectangular perimeter.

### Claim 6 (depends on 1)

The method of claim 1, further comprising coupling a digital section to the flexible interconnect.

### Claim 7 (depends on 1)

The method of claim 1, wherein the EMR sensing device comprises a complimentary metal-oxide semiconductor image sensor.

### Claim 8 (depends on 1)

The method of claim 1, further comprising forming the flexible interconnect into a tube shape.