# US 11,078,594 B2 · Single crystalline metal foil and manufacturing method therefor > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,078,594 B2 - Document ID: US11078594B2 - Status: Granted - Kind: B2 - Application number: 16/317,332 - Filed: 2017-07-12 - Published: 2019-08-08 - Granted: 2021-08-03 - Earliest claimed: 2016-07-12 - Assignees: Institute for Basic Science; Unist (Ulsan National Institute of Science and Technology) - Applicants: Institute for Basic Science; Unist(Ulsan National Institute of Science and Technology) - Inventors: Rodney S. Ruoff; Sunghwan Jin - Web page: https://patentgrep.com/patent/US11078594B2 ## CPC - C30B 1/02: by thermal treatment, e.g. strain annealing (C30B1/12 takes precedence) - C22F 1/00: Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working (apparatus for mechanical working of metal B21, B23, B24) - C22F 1/08: of copper or alloys based thereon - C22F 1/10: of nickel or cobalt or alloys based thereon - C30B 25/14: Feed and outlet means for the gases; Modifying the flow of the reactive gases - C30B 25/18: characterised by the substrate - C30B 29/02: Elements - Y02E 60/10: Energy storage using batteries - C30B: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR - C22F: CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS (surface treatment of metallic material involving at least one process provided for in class C23 and at least one process covered by this subclass, C23F17/00) - Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION ## Abstract The present invention relates to a manufacturing method for single crystalline metal foil including: thermally treating poly-crystalline metal foil positioned to be spaced apart from a base to manufacture single crystalline metal foil, and a single crystalline metal foil manufactured thereby. According to the present invention, single crystalline metal foil having a large area may be obtained by thermally treating the poly-crystalline metal foil under a condition at which stress applied to the poly-crystalline metal foil is minimized. ## Claims ### Claim 1 A manufacturing method for single crystalline metal foil, the method comprising: thermally treating a poly-crystalline metal foil in a chamber to manufacture the single crystalline metal foil, wherein the poly-crystalline metal foil has a thickness ranging from 5 μm to 200 μm, wherein the chamber comprises a holder, and the poly-crystalline metal foil is suspended in the chamber from the holder via a fixation part of the poly-crystalline metal foil such that the poly-crystalline metal foil is spaced apart from a bottom surface and an inner surface of the chamber, and wherein a non-fixation part of the poly-crystalline metal foil is freely suspended to minimize a stress applied to the poly-crystalline metal foil. ### Claim 2 (depends on 1) The manufacturing method of claim 1, wherein the non-fixation part is thermally treated in a state in which the non-fixation part is kept straight. ### Claim 3 (depends on 1) The manufacturing method of claim 1, wherein the poly-crystalline metal foil is copper (Cu), nickel (Ni), cobalt (Co), iron (Fe), ruthenium (Ru), rhodium (Rh), palladium (Pd), platinum (Pt), silver (Ag), rhenium (Re), iridium (Ir), gold (Au), titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), aluminum (Al), zinc (Zn), manganese (Mn), or tin (Sn) foil. ### Claim 4 (depends on 1) The manufacturing method of claim 1, wherein the single crystalline metal foil has a first surface and a second surface, and a crystal plane on the first surface and a crystal plane on the second surface are the same. ### Claim 5 (depends on 1) The manufacturing method of claim 1, wherein the single crystalline metal foil has a (111), (001), (112), (123), or (0001) crystal plane based on a direction perpendicular to the plane. ### Claim 6 (depends on 1) The manufacturing method of claim 1, wherein the thermal treatment is performed at a temperature satisfying the following Equation and a pressure of 0.0001 to 10 atm for 0.5 to 90 hours, 0.3×Tm