# US 11,078,568 B2 · Pumping apparatus and method for substrate processing chambers > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,078,568 B2 - Document ID: US11078568B2 - Status: Granted - Kind: B2 - Application number: 16/685,340 - Filed: 2019-11-15 - Published: 2020-07-09 - Granted: 2021-08-03 - Earliest claimed: 2019-01-08 - Assignees: Applied Materials, Inc. - Applicants: Applied Materials, Inc. - Inventors: Kalyanjit Ghosh; David Blahnik; Amit Kumar Bansal; Tuan Anh Nguyen - Web page: https://patentgrep.com/patent/US11078568B2 ## CPC - C23C 16/4412: {Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps} - C23C 16/5096: {Flat-bed apparatus} - C23C 16/45591: {Fixed means, e.g. wings, baffles} - C23C 16/4586: {Elements in the interior of the support, e.g. electrodes, heating or cooling devices} - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) ## Abstract The present disclosure relates to pumping devices, components thereof, and methods associated therewith for substrate processing chambers. In one example, a pumping ring for substrate processing chambers includes a body. The body includes an upper wall, a lower wall, an inner radial wall, and an outer radial wall. The pumping ring also includes an annulus defined by the upper wall, the lower wall, the inner radial wall, and the outer radial wall. The pumping ring also includes a first exhaust port in the body that is fluidly coupled to the annulus, and a second exhaust port in the body that is fluidly coupled to the annulus. The pumping ring also includes a first baffle disposed in the annulus adjacent to the first exhaust port, and a second baffle disposed in the annulus adjacent to the second exhaust port. ## Claims ### Claim 1 A pumping ring for substrate processing chambers, comprising: an upper wall, a lower wall, an inner radial wall, and an outer radial wall; an annulus defined by the upper wall, the lower wall, the inner radial wall, and the outer radial wall; a first exhaust port in the lower wall that is fluidly coupled to the annulus; a second exhaust port in the lower wall that is fluidly coupled to the annulus, the first exhaust port and the second exhaust port defining a linear axis therebetween; a first baffle disposed in the annulus adjacent to the first exhaust port; and a second baffle disposed in the annulus adjacent to the second exhaust port, the first baffle and the second baffle disposed at a baffle angle measured between an end of the respective first or second baffle and the linear axis, wherein the baffle angle is within a range of about 0.01 degrees to about 55 degrees. ### Claim 2 (depends on 1) The pumping ring of claim 1, further comprising one or more openings that are configured to direct a fluid into the annulus, wherein the first exhaust port and the second exhaust port are fluidly coupled to a foreline. ### Claim 3 (depends on 1) The pumping ring of claim 1, wherein the first baffle and the second baffle are both curved. ### Claim 4 (depends on 1) The pumping ring of claim 1, wherein the baffle angle of the first baffle and the second baffle is within a range of about 30 degrees to about 55 degrees. ### Claim 5 (depends on 4) The pumping ring of claim 4, wherein the baffle angle of the first baffle and the second baffle is about 30 degrees. ### Claim 6 (depends on 5) The pumping ring of claim 5, wherein the first exhaust port and the second exhaust port are disposed equidistantly from each other about a circumferential axis of the pumping ring. ### Claim 7 (depends on 1) The pumping ring of claim 1, wherein the first baffle and the second baffle are configured to direct a fluid around a first end and a second end of each respective first baffle and second baffle. ### Claim 8 (depends on 7) The pumping ring of claim 7, the fluid comprising a processing gas and a processing residue. ### Claim 9 A pumping ring for substrate processing chambers, comprising: a top surface, an upper wall, a lower wall, an inner radial wall, and an outer radial wall; one or more openings configured to direct a fluid therethrough; a first exhaust port; a second exhaust port, the first exhaust port and the second exhaust port defining a linear axis therebetween; a first baffle disposed adjacent the first exhaust port; and a second baffle disposed adjacent the second exhaust port, the first baffle and the second baffle disposed at a baffle angle measured between an end of the respective first or second baffle and the linear axis, wherein the baffle angle is within a range of about 0.01 degrees to about 55 degrees. ### Claim 10 (depends on 9) The pumping ring of claim 9, wherein the first exhaust port and the second exhaust port are disposed equidistantly from each other about a circumferential axis of the pumping ring. ### Claim 11 (depends on 9) The pumping ring of claim 9, wherein the baffle angle of the first baffle and the second baffle is within a range of about 30 degrees to about 55 degrees. ### Claim 12 A substrate processing chamber, comprising: a chamber body; a pedestal disposed in the chamber body; a pumping ring disposed around the pedestal, the pumping ring comprising an upper wall, a lower wall, an inner radial wall, and an outer radial wall; an annulus defined by the upper wall, the lower wall, the inner radial wall, and the outer radial wall; a first exhaust port in the pumping ring that is fluidly coupled to the annulus; a second exhaust port in the pumping ring that is fluidly coupled to the annulus, the first exhaust port and the second exhaust port defining a linear axis therebetween; a first baffle disposed in the annulus adjacent the first exhaust port; and a second baffle disposed in the annulus adjacent the second exhaust port, the first baffle and the second baffle disposed at a baffle angle measured between an end of the respective first or second baffle and the linear axis, wherein the baffle angle is within a range of about 0.01 degrees to about 55 degrees; and a foreline that is fluidly coupled to the first exhaust port and the second exhaust port. ### Claim 13 (depends on 12) The substrate processing chamber of claim 12, wherein the first exhaust port and the second exhaust port are disposed about a circumferential axis of the pumping ring approximately 180 degrees from each other. ### Claim 14 (depends on 12) The substrate processing chamber of claim 12, the pumping ring further comprising one or more openings that are configured to direct a fluid from an internal volume of the chamber body to the annulus. ### Claim 15 (depends on 14) The substrate processing chamber of claim 14, the fluid comprising a processing gas and a processing residue. ### Claim 16 (depends on 12) The substrate processing chamber of claim 12, wherein the first exhaust port is fluidly coupled to the foreline through a first vertical conduit and a horizontal conduit, and the second exhaust port is fluidly coupled to the foreline through a second vertical conduit and the horizontal conduit. ### Claim 17 (depends on 16) The substrate processing chamber of claim 16, the horizontal conduit comprising a first portion that is coupled to the first vertical conduit, a second portion that is coupled to the second vertical conduit, and a third portion that is coupled to the foreline, wherein the first portion and the second portion diverge from the third portion at a first oblique angle and a second oblique angle. ### Claim 18 (depends on 17) The substrate processing chamber of claim 17, wherein the first vertical conduit is fluidly coupled to the first exhaust port through a first conduit in the chamber body, the second vertical conduit is fluidly coupled to the second exhaust port through a second conduit in the chamber body, and the foreline is configured to exhaust a fluid from the first exhaust port and the second exhaust port. ### Claim 19 (depends on 17) The substrate processing chamber of claim 17, wherein the horizontal conduit comprises a first end adjacent to the first vertical conduit, and a second end adjacent to the second vertical conduit. ### Claim 20 (depends on 9) The pumping ring of claim 9, wherein the one or more openings are oriented at an angle relative to an axis parallel to the linear axis, and the angle is within a range of 0.01 degrees to 90 degrees.