# US 11,078,123 B2 · Metal oxynitride thin film, process for producing metal oxynitride thin film, and capacitor element > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,078,123 B2 - Document ID: US11078123B2 - Status: Granted - Kind: B2 - Application number: 16/185,498 - Filed: 2018-11-09 - Published: 2019-05-16 - Granted: 2021-08-03 - Earliest claimed: 2017-11-10 - Assignees: TDK Corporation - Applicants: TDK Corporation - Inventors: Kumiko Yamazaki; Yuki Nagamine; Takeshi Shibahara; Yuji Umeda; Junichi Yamazaki - Web page: https://patentgrep.com/patent/US11078123B2 ## CPC - C04B 35/58007: {based on refractory metal nitrides} - C01B 21/0821: {Oxynitrides of metals, boron or silicon} - C04B 35/58: based on borides, nitrides, {i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides} or silicides {(containing free binder metal C22C29/00)} - C04B 35/58014: {based on titanium nitrides, e.g. TiAlON} - C23C 14/00: Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material - C23C 14/0676: {Oxynitrides} - C23C 14/3414: {Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy} - H01G 4/085: {Vapour deposited} - H01G 4/1227: {based on alkaline earth titanates} - H01G 4/1254: {based on niobium or tungsteen, tantalum oxides or niobates, tantalates} - H01G 4/33: Thin- or thick-film capacitors {(thin- or thick-film circuits; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor)} - C04B 2235/3208: Calcium oxide or oxide-forming salts thereof, e.g. lime - C04B 2235/3213: Strontium oxides or oxide-forming salts thereof - C04B 2235/3215: Barium oxides or oxide-forming salts thereof - C04B 2235/3224: Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide - C04B 2235/3227: Lanthanum oxide or oxide-forming salts thereof - C04B 2235/3232: Titanium oxides or titanates, e.g. rutile or anatase - C04B 2235/3251: Niobium oxides, niobates, tantalum oxides, tantalates, or oxide-forming salts thereof - C04B 2235/3258: Tungsten oxides, tungstates, or oxide-forming salts thereof - C04B 2235/46: Gases other than oxygen used as reactant, e.g. nitrogen used to make a nitride phase - C04B 2235/768: Perovskite structure ABO3 - C04B 2235/77: Density - C04B 2235/95: Products characterised by their size, e.g. microceramics - C04B: LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE {(roofing granules E04D7/005)}; CERAMICS (devitrified glass-ceramics C03C10/00); REFRACTORIES; TREATMENT OF NATURAL STONE - C01B: NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; {METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C} - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) - H01G: CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE (selection of specified materials as dielectric H01B3/00; capacitors having potential barriers H10D1/62, H10K10/10) ## Abstract A metal oxynitride thin film having a perovskite structure, in which the metal oxynitride thin film has a composition represented by a compositional formula A1+αBOx+αNy wherein α is larger than zero and 0.300 or less, x+α is larger than 2.450, and y is 0.300 or more and 0.700 or less, an AO structure having a layered structure parallel to a plane perpendicular to a c-axis of the perovskite structure and having a composition represented by a general formula AO, and the AO structure is bonded with the perovskite structure and incorporated in the perovskite structure. ## Claims ### Claim 1 A metal oxynitride thin film having a perovskite structure where octahedrons in which anions occupy six vertexes and a B site atom exists in a center share vertexes, wherein the metal oxynitride thin film has a composition represented by a compositional formula A1+αBOx+αNy wherein α is larger than zero and 0.300 or less, x+α is larger than 2.450, and y is 0.300 or more and 0.700 or less, an AO structure having a layered structure parallel to a plane perpendicular to a c-axis of the perovskite structure and having a composition represented by a general formula AO, and the AO structure is bonded with the perovskite structure and incorporated in the perovskite structure. ### Claim 2 (depends on 1) The metal oxynitride thin film according to claim 1, wherein the AO structure is scattered in the perovskite structure. ### Claim 3 (depends on 1) The metal oxynitride thin film according to claim 1, wherein A is one or more selected from the group consisting of Ba, Sr, Ca, La, and Nd; and B is one or more selected from the group consisting of Ta, Nb, W, and Ti. ### Claim 4 (depends on 2) The metal oxynitride thin film according to claim 2, wherein A is one or more selected from the group consisting of Ba, Sr, Ca, La, and Nd; and B is one or more selected from the group consisting of Ta, Nb, W, and Ti. ### Claim 5 (depends on 1) The metal oxynitride thin film according to claim 1, wherein a product of a relative dielectric constant of the metal oxynitride thin film measured at an electric field strength of 0.5 Vrms/μm and a frequency of 1 kHz and a specific insulation resistance of the metal oxynitride thin film measured at the electric field strength of 0.5 V/μm is 2.0×1013 Ωcm or more. ### Claim 6 (depends on 2) The metal oxynitride thin film according to claim 2, wherein a product of a relative dielectric constant of the metal oxynitride thin film measured at an electric field strength of 0.5 Vrms/μm and a frequency of 1 kHz and a specific insulation resistance of the metal oxynitride thin film measured at the electric field strength of 0.5 V/μm is 2.0×1013 Ωcm or more. ### Claim 7 (depends on 3) The metal oxynitride thin film according to claim 3, wherein a product of a relative dielectric constant of the metal oxynitride thin film measured at an electric field strength of 0.5 Vrms/μm and a frequency of 1 kHz and a specific insulation resistance of the metal oxynitride thin film measured at the electric field strength of 0.5 V/μm is 2.0×1013 Ωcm or more. ### Claim 8 (depends on 4) The metal oxynitride thin film according to claim 4, wherein a product of a relative dielectric constant of the metal oxynitride thin film measured at an electric field strength of 0.5 Vrms/μm and a frequency of 1 kHz and a specific insulation resistance of the metal oxynitride thin film measured at the electric field strength of 0.5 V/μm is 2.0×1013 Ωcm or more. ### Claim 9 (depends on 1) A process of producing the metal oxynitride thin film according to claim 1 comprising a step of forming the metal oxynitride thin film by depositing a metal oxynitride having a perovskite structure with a use of a film formation material, wherein a raw material, in which a ratio of a molar amount of an A site element of the perovskite structure with respect to a molar amount of a B site element of the perovskite structure is greater than 1.00, is used as the film formation material, a mixed gas comprising a nitrogen gas and an oxygen gas is used as an atmosphere gas in the step of forming the metal oxynitride thin film, and a ratio of a partial pressure of the oxygen gas with respect to a partial pressure of the nitrogen gas is 0.2 or more. ### Claim 10 (depends on 9) The process of producing the metal oxynitride thin film according to claim 9, wherein A is one or more selected from the group consisting of Ba, Sr, Ca, La, and Nd; and B is one or more selected from the group consisting of Ta, Nb, W, and Ti. ### Claim 11 (depends on 1) A capacitor element comprising the metal oxynitride thin film according to claim 1.