# US 11,078,113 B2 · Process for treatment by a beam of mono- or multicharged ions of a gas to produce antireflective glass materials

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- Number: US 11,078,113 B2
- Document ID: US11078113B2
- Status: Granted
- Kind: B2
- Application number: 15/976,686
- Filed: 2018-05-10
- Published: 2018-09-20
- Granted: 2021-08-03
- Earliest claimed: 2013-02-15
- Assignees: Ionics France
- Applicants: Ionics France
- Inventors: Denis Busardo; Frederic Guernalec
- Web page: https://patentgrep.com/patent/US11078113B2

## CPC

- C03C 23/0055: {by ion implantation}
- C03C: CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS

## Abstract

A method of treatment using a beam of singly- and multiply-charged gas ions produced by an electron cyclotron resonance (ECR) source of a glass material in which the ion acceleration voltage of between 5 kV and 1000 kV is chosen to create an implanted layer of a thickness equal to a multiple of 100 nm; and the ion dose per surface unit in a range of between 1012 ions/cm2 and 1018 ions/cm2 is chosen so as to create an atomic concentration of ions equal to 10% with a level of uncertainty of (+/−)5%. Advantageously this makes it possible to obtain materials made from glass that are non-reflective in the visible range.

## Claims

### Claim 1

A durable antireflective treating process for rendering a glass material antireflective to an incident light wave having a wavelength in a visible light range, comprising:
treating the glass material by a bombardment by a beam of mono- and multicharged ions of a gas which are produced by an electron cyclotron resonance (ECR) source where:
the temperature for treatment of the glass material is less than or equal to the glass transition temperature;
the dose of mono- and multicharged ions of a gas which are implanted per unit of surface area is chosen within a range of between 1012 ions/cm2 and 1018 ions/cm2 so as to obtain an atomic concentration of mono- and multicharged ions of a gas such that the refractive index n of the implanted layer is approximately equal to (n1*n2)1/2, where n1 is the index of the air and n2 is the index of the glass;
the acceleration voltage is chosen within a range of between 5 kV and 1000 kV so as to obtain an implanted thickness t equal to p*λ/4*n, where t is the implanted thickness corresponding to a region of implantation where the atomic concentration of implanted mono- and multicharged ions of a gas is greater than or equal to 1%, p is an integer, λ is the wavelength of the incident light wave, expressed in nanometers, and n is the index of the implanted layer.

### Claim 2 (depends on 1)

The process as claimed in claim 1, wherein the mono- and multicharged ions of a gas of the ion beam are ions of the elements selected from the group consisting of helium (He), neon (Ne), argon (Ar), krypton (Kr) and xenon (Xe).

### Claim 3 (depends on 1)

The process as claimed in claim 1, wherein the mono- and multicharged ions of a gas of the ion beam are ions of the gases selected from the group consisting of nitrogen (N2) and oxygen (O2).

### Claim 4 (depends on 1)

The process as claimed in claim 1, wherein the beam of mono- and multicharged ions of a gas comprises 10% of multicharged ions or more than 10% of multicharged ions.

### Claim 5 (depends on 1)

The process as claimed in claim 1, wherein the dose of implanted mono- and multicharged ions of a gas per unit of surface area is chosen in order to achieve an atomic concentration of implanted ions equal to 10% with an uncertainty of (+/−) 5%.

### Claim 6 (depends on 1)

The process as claimed in claim 1, wherein the choice of the dose of implanted mono- and multicharged ions of a gas per unit of surface area and the choice of the acceleration voltage are made by a calculation, carried out beforehand, which makes it possible to evaluate the dose of implanted mono- and multicharged ions of a gas per unit of surface area in order to achieve an atomic concentration of implanted ions equal to 10% with an uncertainty of (+/−) 5% starting from an implantation profile of the chosen ion as a function of the implantation depth.

### Claim 7 (depends on 1)

The process as claimed in claim 1, comprising moving the glass material with respect to the beam of mono- and multicharged ions of a gas at a rate, VD, of between 0.1 mm/s and 1000 mm/s.

### Claim 8 (depends on 1)

The process as claimed in claim 1, wherein one and the same region of the glass material is moved under the beam of mono- and multicharged ions of a gas according to a plurality, N, of passes at the rate VD.

### Claim 9 (depends on 1)

The process as claimed in claim 1, wherein the glass material is a soda-lime glass.

### Claim 10 (depends on 1)

A glass part comprising at least one surface with an implanted ion obtained by the process of claim 1, wherein the reflection of an incident wave in the visible region is reduced to less than half.

### Claim 11 (depends on 10)

The glass part of claim 10, wherein the glass part is selected from the group consisting of a touch screen, a spectacle lens, a lens of an optical device, a window of a building and an optical fiber.