Thin film transistor and thin film transistor array and electronic device
AssigneeSamsung Electronics Co., Ltd.
InventorsYoungjun Yun, Xuzhou Yan, Jinyoung Oh, Zhenan Bao, Hung-Chin Wu
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Abstract
Disclosed are a thin film transistor includes a gate electrode, an active layer including a semiconductor material and a first elastomer, a gate insulator between the gate electrode and the active layer, and a source electrode and a drain electrode electrically connected to the active layer, wherein each of the semiconductor material and the first elastomer has a hydrogen bondable moiety, and the semiconductor material and the first elastomer are subjected to a dynamic intermolecular bonding by a hydrogen bond and a thin film transistor array and an electronic device including the same.
Claims22
A thin film transistor comprising
- a gate electrode,
- an active layer comprising a semiconductor material and a first elastomer,
- a gate insulator between the gate electrode and the active layer, and
- a source electrode and a drain electrode electrically connected to the active layer,
- wherein each of the semiconductor material and the first elastomer has a hydrogen bondable moiety, and
- the semiconductor material and the first elastomer are subjected to a dynamic intermolecular bonding by a hydrogen bond.
Dependencies are inferred from the claim text.