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US 11,063,118 B1Granted
TeraHertz capable integrated circuit
AssigneeAveroses, Inc.
InventorsSammy K. Brown, John D. Bryant, Thomas Brumett
Life of this patent
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Abstract
A nano-vacuum tube (NVT) transistor comprising a source having a knife edge, a drain, and a channel formed between the source and the drain, the channel having a width to provide a pseudo-vacuum in a normal atmosphere. The NVT transistor utilizing a space charge plasma formed at the knife edge within the channel.
Claims19
A nano-vacuum tube (NVT) transistor comprising:
- a substrate;
- a source having a horizontal knife edge parallel to and not in contact with the substrate;
- a drain;
- a channel formed between the source and the drain, the channel having a width selected based on a mean path between molecules in an atmosphere, the channel width between 7 nm and 150 nm to provide a pseudo-vacuum in a normal atmosphere;
- and
- a space charge plasma formed at the horizontal knife edge of the source within the channel.
3 more elements
A nano-vacuum tube (NVT) transistor including a gate, source, and drain, comprising:
- a horizontal knife edge on the source of the NVT transistor, the horizontal knife edge being parallel to and above a substrate;
- a space charge plasma formed at the horizontal knife edge of the source, within a channel defined by the source and the drain, the space charge plasma providing lossless transmission through the NVT transistor in normal atmosphere by having a channel width based on a mean path between molecules in atmosphere, the channel width between 7 nm and 150 nm.
A nano-vacuum tube (NVT) transistor comprising:
- a substrate;
- a source having a horizontal knife edge parallel to and above the substrate;
- a horizontal drain positioned in parallel to the source;
- the horizontal knife edge of the source and the horizontal drain defining a channel having a channel width based on a mean path between molecules in atmosphere, the channel width between 7 nm and 150 nm;
- a space charge plasma formed at the horizontal knife edge of the source, within the channel defined by the horizontal knife edge of the source and the horizontal drain, the space charge plasma providing lossless transmission through the NVT transistor without use of a metallic conductor, avoiding skin effect.
2 more elements
Dependencies are inferred from the claim text.