Metal doped carbon based hard mask removal in semiconductor fabrication

A method of processing a substrate having a metal-doped carbon-containing material thereon, the method comprising:

• (a) providing the substrate to a process chamber,
• wherein the substrate is a semiconductor substrate and comprises the metal-doped carbon-containing material and an underlying material positioned below the metal-doped carbon-containing material, and
• wherein the metal-doped carbon-containing material and the underlying material each comprise negative features formed therein;
• and
• (b) after (a), simultaneously (i) heating the substrate to a temperature between about 200° C. and about 500° C., and (ii) exposing the metal-doped carbon-containing material to a plasma generated from a gas mixture comprising a first etching gas and a second etching gas to etch the metal-doped carbon-containing material,
• wherein the first etching gas forms a first volatile by product with the carbon of the metal-doped carbon-containing material,
• wherein the second etching gas forms a second volatile by product with the metal of the metal-doped carbon-containing material, and
• wherein the metal of the metal-doped carbon-containing material is selected from the group consisting of tungsten, titanium, tantalum, nitrides thereof, silicides thereof, and combinations thereof.