Nonvolatile semiconductor devices including non-circular shaped channel patterns and methods of manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsYong-Hoon Son, Hanmei Choi, Kihyun Hwang
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Abstract
A non-volatile memory structure can include a substrate extending horizontally and a filling insulating pattern extending vertically from the substrate. A plurality of active channel patterns can extend vertically from the substrate in a zig-zag pattern around a perimeter of the filling insulating pattern, where each of the active channel patterns having a respective non-circular shaped horizontal cross-section. A vertical stack of a plurality of gate lines can each extend horizontally around the filling insulating pattern and the plurality of active channel patterns.
Claims18
A vertical NAND non-volatile memory structure comprising:
- a substrate extending horizontally;
- a gate electrode extending horizontally;
- a vertical block provided in an opening of the vertical NAND non-volatile memory structure, the vertical block penetrating the gate electrode and including a filling insulating pattern and a channel pattern, wherein the opening includes a linear region extending in a first horizontal direction D1 and extending regions extending in a second horizontal direction D2, and the second horizontal direction D2 is perpendicular to the first horizontal direction D1;
- and
- wherein the channel pattern extends vertically from the substrate, and
- wherein the channel pattern is disposed in the extending regions opening and has a non-circular shape extending in the second horizontal direction D2 in a plan view of the channel pattern.
A vertical NAND non-volatile memory structure comprising:
- a substrate extending horizontally;
- gate electrodes extending horizontally on the substrate;
- a vertical block penetrating the gate electrodes and including a filling insulating pattern and channel patterns having non-circular shapes,
- wherein the filling insulating pattern extends in a first horizontal direction,
- wherein the channel patterns contact side surfaces of the filling insulating pattern and protrude from the side surfaces of the filling insulating pattern in a second horizontal direction perpendicular to the first horizontal direction.
Dependencies are inferred from the claim text.